The structural characterization and magnetization reversal of 0.1 μm scale antidot-type arrays patterned by Ga ions irradiation were discussed. The arrays were fabricated in Co thin films and NiFe thin films using a focused ion beam. From the absence of cracks it was proved that recrystallization of the films had occurred under FIB irradiation.
ASJC Scopus subject areas
- Electrical and Electronic Engineering