We report the conversion of Si layer in 40 nm SiC by 40 keV carbon (C) implantation into SiO 2/Si structure. SiC layer is revealed to the sample surface after final SiO 2 etching. Two distinct methods were carried out: a) by sequential C implantations followed by 1250°C annealing after each implantation step (under a flux consisting of a mixture of 99% Ar with 1% O 2) and, b) by single-step implantation followed by the same annealing. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution after each sequential implantation step and annealing. Transmission electron microscopy (TEM) has shown that single-step implantation, up to the same minimum fluence, results in better structural quality and granular nature layer in the case of sequential synthesis.