Structural characterization of S 1-xC x nanolayers synthesized by C implantation into SiO 2/Si

Roberto dos Reis*, R. L. Maltez, H. Boudinov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report the conversion of Si layer in 40 nm SiC by 40 keV carbon (C) implantation into SiO 2/Si structure. SiC layer is revealed to the sample surface after final SiO 2 etching. Two distinct methods were carried out: a) by sequential C implantations followed by 1250°C annealing after each implantation step (under a flux consisting of a mixture of 99% Ar with 1% O 2) and, b) by single-step implantation followed by the same annealing. Rutherford Backscattering Spectrometry was employed to measure layer composition evolution after each sequential implantation step and annealing. Transmission electron microscopy (TEM) has shown that single-step implantation, up to the same minimum fluence, results in better structural quality and granular nature layer in the case of sequential synthesis.

Original languageEnglish (US)
Title of host publicationMicroelectronics Technology and Devices, SBMicro 2011
Pages95-101
Number of pages7
Edition1
DOIs
StatePublished - Dec 1 2011
Event26th Symposium on Microelectronics Technology and Devices, SBMicro2011 - Joao Pessoa, Brazil
Duration: Aug 30 2011Sep 2 2011

Publication series

NameECS Transactions
Number1
Volume39
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference26th Symposium on Microelectronics Technology and Devices, SBMicro2011
CountryBrazil
CityJoao Pessoa
Period8/30/119/2/11

ASJC Scopus subject areas

  • Engineering(all)

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