Structural optical and electrical properties of thin films InP-Ga0.47In0.53As layered structures grown by LP-MOCVD

M. Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Very high quality GaxIn1−xAsyP1−y-InP heterojunctions, quantum wells and superlattices have been grown by LP-MOCVD. The InP epilayer with a residual doping levels as low as 3×1013cm−3, with Hall mobility as high as 6000 cm2V−1s−1 300 K and 200.000 cm2V−1s−1 at 50° K have been grown. Photoluminescence at 2 K showed that it is the purest InP epilayer has been reported in the litterature, with zero compensation ratio. GaInAs-InP hetero-junction with electron mobility as high as 12000 cm2V−1s−1 at 300°K and 260.000 cm2V−1s−1 at 2°K with a carrier concentration of 3×1014cm−3 have been measured. The successful monolayer epitaxy of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) (InAs). The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers have been investigated. Low temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.47In0.53As/InP system.

Original languageEnglish (US)
Pages (from-to)28-54
Number of pages27
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume869
DOIs
StatePublished - Mar 31 1988

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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