Structural optical and electrical properties of thin films InP-Ga0.47In0.53As layered structures grown by LP-MOCVD

M. Razeghi

doi:10.1117/12.943614

Structural optical and electrical properties of thin films InP-Ga_0.47In_0.53As layered structures grown by LP-MOCVD

M. Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Very high quality Ga_xIn_1−xAs_yP_1−y-InP heterojunctions, quantum wells and superlattices have been grown by LP-MOCVD. The InP epilayer with a residual doping levels as low as 3×10¹³cm⁻³, with Hall mobility as high as 6000 cm²V⁻¹s⁻¹ 300 K and 200.000 cm²V⁻¹s⁻¹ at 50° K have been grown. Photoluminescence at 2 K showed that it is the purest InP epilayer has been reported in the litterature, with zero compensation ratio. GaInAs-InP hetero-junction with electron mobility as high as 12000 cm²V⁻¹s⁻¹ at 300°K and 260.000 cm²V⁻¹s⁻¹ at 2°K with a carrier concentration of 3×10¹⁴cm⁻³ have been measured. The successful monolayer epitaxy of Ga_0.5In_0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) (InAs). The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers have been investigated. Low temperature photoluminescence experiments showed that (GaAs)_n(InAs)_n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga_0.47In_0.53As/InP system.

Original language	English (US)
Pages (from-to)	28-54
Number of pages	27
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	869
DOIs	https://doi.org/10.1117/12.943614
State	Published - Mar 31 1988

Funding

I wish to tank D. Leguen and J. Antoine for their technical assistance. Drs C. Weisbuch, J. Nagle, P. Maurel, F. Omn?s, B. Vinter, M. Kelly, J.C. Portal, C. Boothroyd, W.M. Stohhs, E. Britton, R.A. Davies, A.P. Long for their collaboration and helpful discussions. I would like to thank Madame A. Coquet for her helps to preparation of manuscript. This research has been partly supported by ESPRIT and DRET organisation.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.943614

Cite this

@article{a1508588b53c45e78df47b89523e73d1,

title = "Structural optical and electrical properties of thin films InP-Ga0.47In0.53As layered structures grown by LP-MOCVD",

abstract = "Very high quality GaxIn1−xAsyP1−y-InP heterojunctions, quantum wells and superlattices have been grown by LP-MOCVD. The InP epilayer with a residual doping levels as low as 3×1013cm−3, with Hall mobility as high as 6000 cm2V−1s−1 300 K and 200.000 cm2V−1s−1 at 50° K have been grown. Photoluminescence at 2 K showed that it is the purest InP epilayer has been reported in the litterature, with zero compensation ratio. GaInAs-InP hetero-junction with electron mobility as high as 12000 cm2V−1s−1 at 300°K and 260.000 cm2V−1s−1 at 2°K with a carrier concentration of 3×1014cm−3 have been measured. The successful monolayer epitaxy of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) (InAs). The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers have been investigated. Low temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.47In0.53As/InP system.",

author = "M. Razeghi",

note = "Funding Information: I wish to tank D. Leguen and J. Antoine for their technical assistance. Drs C. Weisbuch, J. Nagle, P. Maurel, F. Omn?s, B. Vinter, M. Kelly, J.C. Portal, C. Boothroyd, W.M. Stohhs, E. Britton, R.A. Davies, A.P. Long for their collaboration and helpful discussions. I would like to thank Madame A. Coquet for her helps to preparation of manuscript. This research has been partly supported by ESPRIT and DRET organisation.",

year = "1988",

month = mar,

day = "31",

doi = "10.1117/12.943614",

language = "English (US)",

volume = "869",

pages = "28--54",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Razeghi, M.

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PY - 1988/3/31

Y1 - 1988/3/31

N2 - Very high quality GaxIn1−xAsyP1−y-InP heterojunctions, quantum wells and superlattices have been grown by LP-MOCVD. The InP epilayer with a residual doping levels as low as 3×1013cm−3, with Hall mobility as high as 6000 cm2V−1s−1 300 K and 200.000 cm2V−1s−1 at 50° K have been grown. Photoluminescence at 2 K showed that it is the purest InP epilayer has been reported in the litterature, with zero compensation ratio. GaInAs-InP hetero-junction with electron mobility as high as 12000 cm2V−1s−1 at 300°K and 260.000 cm2V−1s−1 at 2°K with a carrier concentration of 3×1014cm−3 have been measured. The successful monolayer epitaxy of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) (InAs). The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers have been investigated. Low temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.47In0.53As/InP system.

AB - Very high quality GaxIn1−xAsyP1−y-InP heterojunctions, quantum wells and superlattices have been grown by LP-MOCVD. The InP epilayer with a residual doping levels as low as 3×1013cm−3, with Hall mobility as high as 6000 cm2V−1s−1 300 K and 200.000 cm2V−1s−1 at 50° K have been grown. Photoluminescence at 2 K showed that it is the purest InP epilayer has been reported in the litterature, with zero compensation ratio. GaInAs-InP hetero-junction with electron mobility as high as 12000 cm2V−1s−1 at 300°K and 260.000 cm2V−1s−1 at 2°K with a carrier concentration of 3×1014cm−3 have been measured. The successful monolayer epitaxy of Ga0.5In0.5As/InP heterostructures by alternating the growth of n(GaAs) and n(InAs) atomic layers. Such structures are designed as (GaAs) (InAs). The influence of parameters such as n or the introduction of a purging time between the InAs-GaAs monolayers have been investigated. Low temperature photoluminescence experiments showed that (GaAs)n(InAs)n/InP multiquantum wells had a better uniformity in composition and thickness than the conventional Ga0.47In0.53As/InP system.

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