Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

V. E. Sandana; D. J. Rogers; F. Hosseini Teherani; P. Bove; N. Ben Sedrine; M. R. Correia; T. Monteiro; R. McClintock; M. Razeghi

doi:10.1117/12.2177427

Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

V. E. Sandana, D. J. Rogers, F. Hosseini Teherani, P. Bove, N. Ben Sedrine, M. R. Correia, T. Monteiro, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002) oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of ∼3.70 eV and ∼3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (∼6mm x 6mm) were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for the junction formed on bulk ZnO. At ∼ 10^-7 A (for 10V of reverse bias) the heterojunction leakage current was approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/n- ZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in various third generation transparent electronics applications.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices VI
Editors	Ferechteh H. Teherani, David C. Look, David J. Rogers
Publisher	SPIE
ISBN (Electronic)	9781628414547
DOIs	https://doi.org/10.1117/12.2177427
State	Published - 2015
Event	Oxide-Based Materials and Devices VI - San Francisco, United States Duration: Feb 8 2015 → Feb 11 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9364
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Oxide-Based Materials and Devices VI
Country/Territory	United States
City	San Francisco
Period	2/8/15 → 2/11/15

Keywords

FTO
Glass
NiO
Pulsed Laser Deposition
ZnO
p-type TCO
transparent heterojunction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2177427

Cite this

Sandana, V. E., Rogers, D. J., Hosseini Teherani, F., Bove, P., Ben Sedrine, N., Correia, M. R., Monteiro, T., McClintock, R., & Razeghi, M. (2015). Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD. In F. H. Teherani, D. C. Look, & D. J. Rogers (Eds.), Oxide-Based Materials and Devices VI Article 93641O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9364). SPIE. https://doi.org/10.1117/12.2177427

@inproceedings{52db2ee8d68c4a93b4cafa8f8cceb89b,

title = "Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD",

abstract = "NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002) oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of ∼3.70 eV and ∼3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (∼6mm x 6mm) were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for the junction formed on bulk ZnO. At ∼ 10-7 A (for 10V of reverse bias) the heterojunction leakage current was approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/n- ZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in various third generation transparent electronics applications.",

keywords = "FTO, Glass, NiO, Pulsed Laser Deposition, ZnO, p-type TCO, transparent heterojunction",

author = "Sandana, {V. E.} and Rogers, {D. J.} and {Hosseini Teherani}, F. and P. Bove and {Ben Sedrine}, N. and Correia, {M. R.} and T. Monteiro and R. McClintock and M. Razeghi",

note = "Publisher Copyright: {\textcopyright} 2015 SPIE.; Oxide-Based Materials and Devices VI ; Conference date: 08-02-2015 Through 11-02-2015",

year = "2015",

doi = "10.1117/12.2177427",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Teherani, {Ferechteh H.} and Look, {David C.} and Rogers, {David J.}",

booktitle = "Oxide-Based Materials and Devices VI",

}

Sandana, VE, Rogers, DJ, Hosseini Teherani, F, Bove, P, Ben Sedrine, N, Correia, MR, Monteiro, T, McClintock, R & Razeghi, M 2015, Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD. in FH Teherani, DC Look & DJ Rogers (eds), Oxide-Based Materials and Devices VI., 93641O, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9364, SPIE, Oxide-Based Materials and Devices VI, San Francisco, United States, 2/8/15. https://doi.org/10.1117/12.2177427

Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD. / Sandana, V. E.; Rogers, D. J.; Hosseini Teherani, F. et al.
Oxide-Based Materials and Devices VI. ed. / Ferechteh H. Teherani; David C. Look; David J. Rogers. SPIE, 2015. 93641O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9364).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

AU - Sandana, V. E.

AU - Rogers, D. J.

AU - Hosseini Teherani, F.

AU - Bove, P.

AU - Ben Sedrine, N.

AU - Correia, M. R.

AU - Monteiro, T.

AU - McClintock, R.

AU - Razeghi, M.

PY - 2015

Y1 - 2015

N2 - NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002) oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of ∼3.70 eV and ∼3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (∼6mm x 6mm) were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for the junction formed on bulk ZnO. At ∼ 10-7 A (for 10V of reverse bias) the heterojunction leakage current was approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/n- ZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in various third generation transparent electronics applications.

AB - NiO/ZnO heterostructures were fabricated on FTO/glass and bulk hydrothermal ZnO substrates by pulsed laser deposition. X-Ray diffraction and Room Temperature (RT) Raman studies were consistent with the formation of (0002) oriented wurtzite ZnO and (111) oriented fcc NiO. RT optical transmission studies revealed bandgap energy values of ∼3.70 eV and ∼3.30 eV for NiO and ZnO, respectively and more than 80% transmission for the whole ZnO/NiO/FTO/glass stack over the majority of the visible spectrum. Lateral p-n heterojunction mesas (∼6mm x 6mm) were fabricated using a shadow mask during PLD growth. n-n and p-p measurements showed that Ti/Au contacting gave an Ohmic reponse for the NiO, ZnO and FTO. Both heterojunctions had rectifying I/V characteristics. The junction on FTO/glass gave forward bias currents (243mA at +10V) that were over 5 orders of magnitude higher than those for the junction formed on bulk ZnO. At ∼ 10-7 A (for 10V of reverse bias) the heterojunction leakage current was approximately two orders of magnitude lower on the bulk ZnO substrate than on FTO. Overall, the lateral p-NiO/n- ZnO/FTO/glass device proved far superior to that formed by growing p-NiO directly on the bulk n-ZnO substrate and gave a combination of electrical performance and visible wavelength transparency that could predispose it for use in various third generation transparent electronics applications.

KW - FTO

KW - Glass

KW - NiO

KW - Pulsed Laser Deposition

KW - ZnO

KW - p-type TCO

KW - transparent heterojunction

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DO - 10.1117/12.2177427

M3 - Conference contribution

AN - SCOPUS:84931843641

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices VI

A2 - Teherani, Ferechteh H.

A2 - Look, David C.

A2 - Rogers, David J.

PB - SPIE

T2 - Oxide-Based Materials and Devices VI

Y2 - 8 February 2015 through 11 February 2015

ER -

Sandana VE, Rogers DJ, Hosseini Teherani F, Bove P, Ben Sedrine N, Correia MR et al. Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD. In Teherani FH, Look DC, Rogers DJ, editors, Oxide-Based Materials and Devices VI. SPIE. 2015. 93641O. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2177427

Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD

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Keywords

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