Structural ordering in InGaAs/GaAs superlattices

Z. H. Ming; Y. L. Soo; S. Huang; Y. H. Kao; K. Stair; G. Devane; C. Choi-Feng

doi:10.1063/1.363421

Structural ordering in InGaAs/GaAs superlattices

Z. H. Ming^*, Y. L. Soo, S. Huang, Y. H. Kao, K. Stair, G. Devane, C. Choi-Feng

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Various x-ray techniques have been applied to a study of semiconductor superlattices consisting of 100-period of In_xGa_1-xAs (15 Å)/GaAs (100 Å) grown on GaAs(100) substrates by molecular beam epitaxy. Structural parameters pertaining to the morphology of interfaces and thickness variations were obtained. The interfaces in these superlattices are found to be highly correlated, and the layers all show a high degree of crystallinity. Splittings in the x-ray reflectivity and diffraction patterns in one of the samples provide clear evidence for pronounced thickness modulation, and direct comparison of the diffraction satellite peaks with results of high resolution transmission electron microscopy indicates that there exists a lateral structural ordering in the [110] direction during epitaxial growth.

Original language	English (US)
Pages (from-to)	4372-4376
Number of pages	5
Journal	Journal of Applied Physics
Volume	80
Issue number	8
DOIs	https://doi.org/10.1063/1.363421
State	Published - Oct 15 1996

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Structural ordering in InGaAs/GaAs superlattices",

abstract = "Various x-ray techniques have been applied to a study of semiconductor superlattices consisting of 100-period of InxGa1-xAs (15 {\AA})/GaAs (100 {\AA}) grown on GaAs(100) substrates by molecular beam epitaxy. Structural parameters pertaining to the morphology of interfaces and thickness variations were obtained. The interfaces in these superlattices are found to be highly correlated, and the layers all show a high degree of crystallinity. Splittings in the x-ray reflectivity and diffraction patterns in one of the samples provide clear evidence for pronounced thickness modulation, and direct comparison of the diffraction satellite peaks with results of high resolution transmission electron microscopy indicates that there exists a lateral structural ordering in the [110] direction during epitaxial growth.",

author = "Ming, {Z. H.} and Soo, {Y. L.} and S. Huang and Kao, {Y. H.} and K. Stair and G. Devane and C. Choi-Feng",

year = "1996",

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T1 - Structural ordering in InGaAs/GaAs superlattices

AU - Ming, Z. H.

AU - Soo, Y. L.

AU - Huang, S.

AU - Kao, Y. H.

AU - Stair, K.

AU - Devane, G.

AU - Choi-Feng, C.

PY - 1996/10/15

Y1 - 1996/10/15

N2 - Various x-ray techniques have been applied to a study of semiconductor superlattices consisting of 100-period of InxGa1-xAs (15 Å)/GaAs (100 Å) grown on GaAs(100) substrates by molecular beam epitaxy. Structural parameters pertaining to the morphology of interfaces and thickness variations were obtained. The interfaces in these superlattices are found to be highly correlated, and the layers all show a high degree of crystallinity. Splittings in the x-ray reflectivity and diffraction patterns in one of the samples provide clear evidence for pronounced thickness modulation, and direct comparison of the diffraction satellite peaks with results of high resolution transmission electron microscopy indicates that there exists a lateral structural ordering in the [110] direction during epitaxial growth.

AB - Various x-ray techniques have been applied to a study of semiconductor superlattices consisting of 100-period of InxGa1-xAs (15 Å)/GaAs (100 Å) grown on GaAs(100) substrates by molecular beam epitaxy. Structural parameters pertaining to the morphology of interfaces and thickness variations were obtained. The interfaces in these superlattices are found to be highly correlated, and the layers all show a high degree of crystallinity. Splittings in the x-ray reflectivity and diffraction patterns in one of the samples provide clear evidence for pronounced thickness modulation, and direct comparison of the diffraction satellite peaks with results of high resolution transmission electron microscopy indicates that there exists a lateral structural ordering in the [110] direction during epitaxial growth.

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