Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

J. Y. Dai; H. C. Ong; R. P.H. Chang

doi:10.1557/JMR.1999.0181

Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

J. Y. Dai^*, H. C. Ong, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

Original language	English (US)
Pages (from-to)	1329-1336
Number of pages	8
Journal	Journal of Materials Research
Volume	14
Issue number	4
DOIs	https://doi.org/10.1557/JMR.1999.0181
State	Published - Apr 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{cb3e15df4ee148939bfd234ef2805730,

title = "Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition",

abstract = "Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.",

author = "Dai, {J. Y.} and Ong, {H. C.} and Chang, {R. P.H.}",

note = "Funding Information: This work was supported by the Basic Energy Sciences Division of the Department of Energy. This research utilized MRL Central facilities supported by the National Science Foundation at the Materials Research Center of Northwestern University. The authors would like to thank Dr. Thomas Isabell for his help in obtaining the EBSD.",

year = "1999",

month = apr,

doi = "10.1557/JMR.1999.0181",

language = "English (US)",

volume = "14",

pages = "1329--1336",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "4",

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TY - JOUR

T1 - Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

AU - Dai, J. Y.

AU - Ong, H. C.

AU - Chang, R. P.H.

N1 - Funding Information: This work was supported by the Basic Energy Sciences Division of the Department of Energy. This research utilized MRL Central facilities supported by the National Science Foundation at the Materials Research Center of Northwestern University. The authors would like to thank Dr. Thomas Isabell for his help in obtaining the EBSD.

PY - 1999/4

Y1 - 1999/4

N2 - Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

AB - Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

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U2 - 10.1557/JMR.1999.0181

DO - 10.1557/JMR.1999.0181

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JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 4

ER -

Structural properties of yttria-stabilized zirconia thin films grown by pulsed laser deposition

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