Abstract
Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1329-1336 |
| Number of pages | 8 |
| Journal | Journal of Materials Research |
| Volume | 14 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1999 |
Funding
This work was supported by the Basic Energy Sciences Division of the Department of Energy. This research utilized MRL Central facilities supported by the National Science Foundation at the Materials Research Center of Northwestern University. The authors would like to thank Dr. Thomas Isabell for his help in obtaining the EBSD.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering