Structural ripple formation in Ge/Sb multilayers induced by laser irradiation

R. Serna; C. N. Afonso; A. K. Petford-Long; N. J. Long

doi:10.1007/BF00332179

Structural ripple formation in Ge/Sb multilayers induced by laser irradiation

R. Serna^*, C. N. Afonso, A. K. Petford-Long, N. J. Long

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.

Original language	English (US)
Pages (from-to)	197-202
Number of pages	6
Journal	Applied Physics A Solids and Surfaces
Volume	58
Issue number	2
DOIs	https://doi.org/10.1007/BF00332179
State	Published - Feb 1 1994

Keywords

64.75.+g
78.90.+t
81.40.-z

ASJC Scopus subject areas

General Materials Science
General Engineering
Physics and Astronomy (miscellaneous)

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10.1007/BF00332179

Cite this

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title = "Structural ripple formation in Ge/Sb multilayers induced by laser irradiation",

abstract = "Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.",

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author = "R. Serna and Afonso, {C. N.} and Petford-Long, {A. K.} and Long, {N. J.}",

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T1 - Structural ripple formation in Ge/Sb multilayers induced by laser irradiation

AU - Serna, R.

AU - Afonso, C. N.

AU - Petford-Long, A. K.

AU - Long, N. J.

PY - 1994/2/1

Y1 - 1994/2/1

N2 - Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.

AB - Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (λ=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.

KW - 64.75.+g

KW - 78.90.+t

KW - 81.40.-z

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Structural ripple formation in Ge/Sb multilayers induced by laser irradiation

Abstract

Keywords

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