Structural studies of artificial Si/Nb superlattice films

S. N. Song*, D. X. Li, J. B. Ketterson, S. M. Hues

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Amorphous Si/Nb superlattices with modulation wavelengths ranging from 20-200 Å have been grown on sapphire substrates at 100-150 °C by dual e-beam evaporation in an ultra-high-vacuum (UHV) system. The low-angle x-ray diffraction data can be accounted for by a symmetric trapezoidal composition profile model. The intermixing at the layer interfaces is estimated to be 6-12 Å, depending on the substrate temperatures. In the film growth direction, the coherent domain size of the polycrystalline Nb layers scales with the Nb layer thickness. High-resolution transmission electron microscopy reveals the existence of microcrystallites in the 20-Å-thick amorphous Nb layers; also resolved are the microstructure of the substrate/superlattice and superlattice/thick-Nb layer interfaces. In addition, Auger depth profiling results are also consistent with the expected composition modulation.

Original languageEnglish (US)
Pages (from-to)5360-5366
Number of pages7
JournalJournal of Applied Physics
Volume66
Issue number11
DOIs
StatePublished - Dec 1 1989

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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