Structure and chemistry of manganite based tunnel junctions

D. Ozkaya; A. K. Petford-Long; Moon Ho Jo; M. G. Blamire

doi:10.1063/1.1357834

Structure and chemistry of manganite based tunnel junctions

D. Ozkaya^*, A. K. Petford-Long, Moon Ho Jo, M. G. Blamire

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article

6 Scopus citations

Abstract

Half-metallic manganite (La_0.7Ca_0.3MnO₃) based spin tunnel junctions with two barrier layers (NdGaO₃ and La_0.45Ca_0.55MnO₃) have been investigated structurally as well as chemically using high spatial resolution electron microscopy techniques. Both junctions were grown on a NdGaO₃ substrate, which has better lattice match compared to a more traditional substrate such as strontium titanate (SrTiO₃). Devices with a NdGaO₃ barrier showed tunnel magnetoresistance (TMR) values up to 85% at 77 K, whereas the devices with a La_0.45Ca_0.55MnO₃ barrier layer showed only 18% TMR at 77 K. The electron microscopy data show much clearer, sharper interfaces, structurally as well as chemically, for NdGaO₃ than for the La_0.45Ca_0.55MnO₃ barrier layer.

Original language	English (US)
Pages (from-to)	6757-6759
Number of pages	3
Journal	Journal of Applied Physics
Volume	89
Issue number	11 II
DOIs	https://doi.org/10.1063/1.1357834
State	Published - Jun 1 2001
Event	8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States Duration: Jan 7 2001 → Jan 11 2001

ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

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Ozkaya, D., Petford-Long, A. K., Jo, M. H., & Blamire, M. G. (2001). Structure and chemistry of manganite based tunnel junctions. Journal of Applied Physics, 89(11 II), 6757-6759. https://doi.org/10.1063/1.1357834

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title = "Structure and chemistry of manganite based tunnel junctions",

abstract = "Half-metallic manganite (La0.7Ca0.3MnO3) based spin tunnel junctions with two barrier layers (NdGaO3 and La0.45Ca0.55MnO3) have been investigated structurally as well as chemically using high spatial resolution electron microscopy techniques. Both junctions were grown on a NdGaO3 substrate, which has better lattice match compared to a more traditional substrate such as strontium titanate (SrTiO3). Devices with a NdGaO3 barrier showed tunnel magnetoresistance (TMR) values up to 85% at 77 K, whereas the devices with a La0.45Ca0.55MnO3 barrier layer showed only 18% TMR at 77 K. The electron microscopy data show much clearer, sharper interfaces, structurally as well as chemically, for NdGaO3 than for the La0.45Ca0.55MnO3 barrier layer.",

author = "D. Ozkaya and Petford-Long, {A. K.} and Jo, {Moon Ho} and Blamire, {M. G.}",

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AU - Ozkaya, D.

AU - Petford-Long, A. K.

AU - Jo, Moon Ho

AU - Blamire, M. G.

PY - 2001/6/1

Y1 - 2001/6/1

N2 - Half-metallic manganite (La0.7Ca0.3MnO3) based spin tunnel junctions with two barrier layers (NdGaO3 and La0.45Ca0.55MnO3) have been investigated structurally as well as chemically using high spatial resolution electron microscopy techniques. Both junctions were grown on a NdGaO3 substrate, which has better lattice match compared to a more traditional substrate such as strontium titanate (SrTiO3). Devices with a NdGaO3 barrier showed tunnel magnetoresistance (TMR) values up to 85% at 77 K, whereas the devices with a La0.45Ca0.55MnO3 barrier layer showed only 18% TMR at 77 K. The electron microscopy data show much clearer, sharper interfaces, structurally as well as chemically, for NdGaO3 than for the La0.45Ca0.55MnO3 barrier layer.

AB - Half-metallic manganite (La0.7Ca0.3MnO3) based spin tunnel junctions with two barrier layers (NdGaO3 and La0.45Ca0.55MnO3) have been investigated structurally as well as chemically using high spatial resolution electron microscopy techniques. Both junctions were grown on a NdGaO3 substrate, which has better lattice match compared to a more traditional substrate such as strontium titanate (SrTiO3). Devices with a NdGaO3 barrier showed tunnel magnetoresistance (TMR) values up to 85% at 77 K, whereas the devices with a La0.45Ca0.55MnO3 barrier layer showed only 18% TMR at 77 K. The electron microscopy data show much clearer, sharper interfaces, structurally as well as chemically, for NdGaO3 than for the La0.45Ca0.55MnO3 barrier layer.

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