Structure and interdiffusion of epitaxial ZnO/ZnMgO nanolayered thin films

B. L. Stevens; D. J. Cohen; S. A. Barnett

doi:10.1116/1.2993257

Structure and interdiffusion of epitaxial ZnO/ZnMgO nanolayered thin films

B. L. Stevens, D. J. Cohen, S. A. Barnett

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Interdiffusion was studied in Zn_1-x Mg_x O:Al/ZnO expitaxial superlattices with periods of 15 and 25 nm grown on basal-plane sapphire by dc reactive sputtering. Interdiffusion coefficients were determined by analyzing low angle x-ray reflectivity peak intensity decreases during isothermal annealing, using analytical interdiffusion expressions. The results were corroborated with diffusion data obtained from secondary ion mass spectrometry compositional depth profiles. An initial fast diffusion stage was observed for, e.g., the first few hours at 500 °C, followed by slower diffusion at longer times.

Original language	English (US)
Pages (from-to)	1538-1541
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	26
Issue number	6
DOIs	https://doi.org/10.1116/1.2993257
State	Published - 2008

Funding

This material is based upon work supported by the MRSEC program of the National Science Foundation (DMR-0520513) at the Materials Research Center of Northwestern University.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Structure and interdiffusion of epitaxial ZnO/ZnMgO nanolayered thin films",

abstract = "Interdiffusion was studied in Zn1-x Mgx O:Al/ZnO expitaxial superlattices with periods of 15 and 25 nm grown on basal-plane sapphire by dc reactive sputtering. Interdiffusion coefficients were determined by analyzing low angle x-ray reflectivity peak intensity decreases during isothermal annealing, using analytical interdiffusion expressions. The results were corroborated with diffusion data obtained from secondary ion mass spectrometry compositional depth profiles. An initial fast diffusion stage was observed for, e.g., the first few hours at 500 °C, followed by slower diffusion at longer times.",

author = "Stevens, {B. L.} and Cohen, {D. J.} and Barnett, {S. A.}",

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year = "2008",

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T1 - Structure and interdiffusion of epitaxial ZnO/ZnMgO nanolayered thin films

AU - Stevens, B. L.

AU - Cohen, D. J.

AU - Barnett, S. A.

N1 - Funding Information: This material is based upon work supported by the MRSEC program of the National Science Foundation (DMR-0520513) at the Materials Research Center of Northwestern University.

PY - 2008

Y1 - 2008

N2 - Interdiffusion was studied in Zn1-x Mgx O:Al/ZnO expitaxial superlattices with periods of 15 and 25 nm grown on basal-plane sapphire by dc reactive sputtering. Interdiffusion coefficients were determined by analyzing low angle x-ray reflectivity peak intensity decreases during isothermal annealing, using analytical interdiffusion expressions. The results were corroborated with diffusion data obtained from secondary ion mass spectrometry compositional depth profiles. An initial fast diffusion stage was observed for, e.g., the first few hours at 500 °C, followed by slower diffusion at longer times.

AB - Interdiffusion was studied in Zn1-x Mgx O:Al/ZnO expitaxial superlattices with periods of 15 and 25 nm grown on basal-plane sapphire by dc reactive sputtering. Interdiffusion coefficients were determined by analyzing low angle x-ray reflectivity peak intensity decreases during isothermal annealing, using analytical interdiffusion expressions. The results were corroborated with diffusion data obtained from secondary ion mass spectrometry compositional depth profiles. An initial fast diffusion stage was observed for, e.g., the first few hours at 500 °C, followed by slower diffusion at longer times.

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Structure and interdiffusion of epitaxial ZnO/ZnMgO nanolayered thin films

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