Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputtering

L. Rivaud; S. A. Barnett; A. E. Greene; E. T. Marciniec

doi:10.1116/1.577247

Structure and physical properties of polycrystalline hexagonal Ta₂N films deposited by reactive sputtering

L. Rivaud, S. A. Barnett, A. E. Greene, E. T. Marciniec^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Hexagonal-structure polycrystalline Ta₂N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N₂atmospheres. Transmission electron microscopy examination of Ta₂N films grown on BaF₂(lll) using the same deposition conditions showed that the average grain size was ~10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2 X10” ⁴Ω cm and 1.2 X 10^-4K^-1respectively. The films exhibited relatively low compressive stresses, 1–3 X 10⁹dyncm^-2and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2 X 10⁷thermal cycles between < 200 and ⋍ 850 °.

Original language	English (US)
Pages (from-to)	2180-2182
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.577247
State	Published - Jul 1991

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputtering",

abstract = "Hexagonal-structure polycrystalline Ta2N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF2(lll) using the same deposition conditions showed that the average grain size was ~10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2 X10” 4Ω cm and 1.2 X 10-4K-1respectively. The films exhibited relatively low compressive stresses, 1–3 X 109dyncm-2and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2 X 107thermal cycles between < 200 and ⋍ 850 °.",

author = "L. Rivaud and Barnett, {S. A.} and Greene, {A. E.} and Marciniec, {E. T.}",

year = "1991",

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T1 - Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputtering

AU - Rivaud, L.

AU - Barnett, S. A.

AU - Greene, A. E.

AU - Marciniec, E. T.

PY - 1991/7

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N2 - Hexagonal-structure polycrystalline Ta2N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF2(lll) using the same deposition conditions showed that the average grain size was ~10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2 X10” 4Ω cm and 1.2 X 10-4K-1respectively. The films exhibited relatively low compressive stresses, 1–3 X 109dyncm-2and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2 X 107thermal cycles between < 200 and ⋍ 850 °.

AB - Hexagonal-structure polycrystalline Ta2N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF2(lll) using the same deposition conditions showed that the average grain size was ~10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2 X10” 4Ω cm and 1.2 X 10-4K-1respectively. The films exhibited relatively low compressive stresses, 1–3 X 109dyncm-2and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2 X 107thermal cycles between < 200 and ⋍ 850 °.

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Structure and physical properties of polycrystalline hexagonal Ta₂N films deposited by reactive sputtering

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