Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputtering

L. Rivaud, S. A. Barnett, A. E. Greene, E. T. Marciniec*

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Hexagonal-structure polycrystalline Ta2N films with (2131) preferred orientation were deposited by reactive sputter deposition onto glass substrates in mixed Ar/N2atmospheres. Transmission electron microscopy examination of Ta2N films grown on BaF2(lll) using the same deposition conditions showed that the average grain size was ~10 nm. The room-temperature resistivity and temperature coefficient of resistivity of films grown on glass were 2 X10” 4Ω cm and 1.2 X 10-4K-1respectively. The films exhibited relatively low compressive stresses, 1–3 X 109dyncm-2and film/substrate couples photolithographically patterned into thin-film heater elements withstood 2 X 107thermal cycles between < 200 and ⋍ 850 °.

Original languageEnglish (US)
Pages (from-to)2180-2182
Number of pages3
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume9
Issue number4
DOIs
StatePublished - Jul 1991

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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