Structure and Physical Properties of the New Layered Ternary Chalcogenides Ta2NiS5 and Ta2NiSe5

Steven A. Sunshine, James A Ibers*

*Corresponding author for this work

Research output: Contribution to journalArticle

73 Scopus citations

Abstract

Two new ternary chalcogenides have been prepared and characterized. Both Ta2NiS5 (D2h 17-Cmcm; a = 3.415 (1), b = 12.146 (3), c = 15.097 (4)Å) and Ta2NiSe5 (C2h 6-C2/c; a = 3.496 (1), b = 12.829 (3), c = 15.641 (4)Å; β = 90.53 (1)°) crystallize as layered structures with four formula units per cell. These layers contain octahedral tantalum atoms and tetrahedral nickel atoms each coordinated by chalcogen atoms. These polyhedra join via shared edges to form zigzag chains along the c axis. Electrical conductivity and magnetic susceptibility measurements show these materials to be diamagnetic semiconductors. The description of the structures as Ta4+Ni2+Q2- (Q = S, Se) with pairing of nickel and tantalum electrons is consistent with these physical properties.

Original languageEnglish (US)
Pages (from-to)3611-3614
Number of pages4
JournalInorganic Chemistry
Volume24
Issue number22
DOIs
StatePublished - Oct 1 1985

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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