Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se)

Ratnasabapathy G. Iyer*, Daniel Bilc, S. D. Mahanti, Mercouri G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

We describe the Tl 2SnAs 2Q 6, (Q= S, Se) compounds which consist of [SnAs 2S 6] 2- layers with the Tl + cations lying in between. Tl 2SnAs 2S 6 and Tl 2SnAs 2Se 6 crystallize in the space group P-3 with a = 6.706(4) Å, c = 7.187(6) Å and a = 6.996(3) Å, c = 7.232(4) Å respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.

Original languageEnglish (US)
Article numberFF2.7
Pages (from-to)83-88
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume848
StatePublished - Dec 19 2005
Event2004 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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