Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se)

Ratnasabapathy G. Iyer; Daniel Bilc; S. D. Mahanti; Mercouri G. Kanatzidis

Structure and properties of the semiconductors Tl ₂SnAs ₂Q ₆ (Q = S, Se)

Ratnasabapathy G. Iyer^*, Daniel Bilc, S. D. Mahanti, Mercouri G. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

We describe the Tl ₂SnAs ₂Q ₆, (Q= S, Se) compounds which consist of [SnAs ₂S ₆] ^2- layers with the Tl ⁺ cations lying in between. Tl ₂SnAs ₂S ₆ and Tl ₂SnAs ₂Se ₆ crystallize in the space group P-3 with a = 6.706(4) Å, c = 7.187(6) Å and a = 6.996(3) Å, c = 7.232(4) Å respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.

Original language	English (US)
Article number	FF2.7
Pages (from-to)	83-88
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	848
State	Published - Dec 19 2005
Event	2004 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 29 2004 → Dec 2 2004

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{5f30c037a92b445b878fc6d4d85ca0bc,

title = "Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se)",

abstract = "We describe the Tl 2SnAs 2Q 6, (Q= S, Se) compounds which consist of [SnAs 2S 6] 2- layers with the Tl + cations lying in between. Tl 2SnAs 2S 6 and Tl 2SnAs 2Se 6 crystallize in the space group P-3 with a = 6.706(4) {\AA}, c = 7.187(6) {\AA} and a = 6.996(3) {\AA}, c = 7.232(4) {\AA} respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.",

author = "Iyer, {Ratnasabapathy G.} and Daniel Bilc and Mahanti, {S. D.} and Kanatzidis, {Mercouri G.}",

year = "2005",

month = dec,

day = "19",

language = "English (US)",

volume = "848",

pages = "83--88",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2004 Materials Research Society Fall Meeting ; Conference date: 29-11-2004 Through 02-12-2004",

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TY - JOUR

T1 - Structure and properties of the semiconductors Tl 2SnAs 2Q 6 (Q = S, Se)

AU - Iyer, Ratnasabapathy G.

AU - Bilc, Daniel

AU - Mahanti, S. D.

AU - Kanatzidis, Mercouri G.

PY - 2005/12/19

Y1 - 2005/12/19

N2 - We describe the Tl 2SnAs 2Q 6, (Q= S, Se) compounds which consist of [SnAs 2S 6] 2- layers with the Tl + cations lying in between. Tl 2SnAs 2S 6 and Tl 2SnAs 2Se 6 crystallize in the space group P-3 with a = 6.706(4) Å, c = 7.187(6) Å and a = 6.996(3) Å, c = 7.232(4) Å respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.

AB - We describe the Tl 2SnAs 2Q 6, (Q= S, Se) compounds which consist of [SnAs 2S 6] 2- layers with the Tl + cations lying in between. Tl 2SnAs 2S 6 and Tl 2SnAs 2Se 6 crystallize in the space group P-3 with a = 6.706(4) Å, c = 7.187(6) Å and a = 6.996(3) Å, c = 7.232(4) Å respectively. These compounds are semiconductors with band gaps of 1.68 eV for the sulfide and 1.08 eV for selenide corresponding to their dark red and black colors respectively. Band structure calculations suggest indirect band gaps in these materials.

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M3 - Conference article

AN - SCOPUS:28844451994

SN - 0272-9172

VL - 848

SP - 83

EP - 88

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - FF2.7

T2 - 2004 Materials Research Society Fall Meeting

Y2 - 29 November 2004 through 2 December 2004

ER -

Structure and properties of the semiconductors Tl ₂SnAs ₂Q ₆ (Q = S, Se)

Abstract

ASJC Scopus subject areas

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