Structure of a passivated Ge surface prepared from aqueous solution

P. F. Lyman*, O. Sakata, D. L. Marasco, T. L. Lee, K. D. Breneman, D. T. Keane, M. J. Bedzyk

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

Original languageEnglish (US)
Pages (from-to)L594-L598
JournalSurface Science
Issue number1
StatePublished - Aug 10 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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