Structure of a passivated Ge surface prepared from aqueous solution

P. F. Lyman; O. Sakata; D. L. Marasco; T. L. Lee; K. D. Breneman; D. T. Keane; M. J. Bedzyk

doi:10.1016/S0039-6028(00)00508-2

Structure of a passivated Ge surface prepared from aqueous solution

P. F. Lyman^*, O. Sakata, D. L. Marasco, T. L. Lee, K. D. Breneman, D. T. Keane, M. J. Bedzyk

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH₄)₂S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeS_x layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

Original language	English (US)
Pages (from-to)	L594-L598
Journal	Surface Science
Volume	462
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(00)00508-2
State	Published - Aug 10 2000

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(00)00508-2

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title = "Structure of a passivated Ge surface prepared from aqueous solution",

abstract = "The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.",

author = "Lyman, {P. F.} and O. Sakata and Marasco, {D. L.} and Lee, {T. L.} and Breneman, {K. D.} and Keane, {D. T.} and Bedzyk, {M. J.}",

note = "Funding Information: The authors gratefully acknowledge the help of P. Baldo in acquiring the RBS spectra. This work was supported by the US Department of Energy under Contract No. W-31-109-ENG-38 to Argonne National Laboratory and Contract DE-F02-96ER45588 to Northwestern University, and by the National Science Foundation under Contracts No. DMR-9632472 to the MRC at Northwestern University, DMR-9632593 and DMR-9973436 to MJB, and DMR-9304725 to DND, and by the State of Illinois under Contract No. IBHE HECA NWU 96 to DND.",

year = "2000",

month = aug,

day = "10",

doi = "10.1016/S0039-6028(00)00508-2",

language = "English (US)",

volume = "462",

pages = "L594--L598",

journal = "Surface Science",

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number = "1",

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TY - JOUR

T1 - Structure of a passivated Ge surface prepared from aqueous solution

AU - Lyman, P. F.

AU - Sakata, O.

AU - Marasco, D. L.

AU - Lee, T. L.

AU - Breneman, K. D.

AU - Keane, D. T.

AU - Bedzyk, M. J.

N1 - Funding Information: The authors gratefully acknowledge the help of P. Baldo in acquiring the RBS spectra. This work was supported by the US Department of Energy under Contract No. W-31-109-ENG-38 to Argonne National Laboratory and Contract DE-F02-96ER45588 to Northwestern University, and by the National Science Foundation under Contracts No. DMR-9632472 to the MRC at Northwestern University, DMR-9632593 and DMR-9973436 to MJB, and DMR-9304725 to DND, and by the State of Illinois under Contract No. IBHE HECA NWU 96 to DND.

PY - 2000/8/10

Y1 - 2000/8/10

N2 - The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

AB - The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

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U2 - 10.1016/S0039-6028(00)00508-2

DO - 10.1016/S0039-6028(00)00508-2

M3 - Article

AN - SCOPUS:0034245338

SN - 0039-6028

VL - 462

SP - L594-L598

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Structure of a passivated Ge surface prepared from aqueous solution

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