Structure of a passivated Ge surface prepared from aqueous solution

P. F. Lyman; O. Sakata; D. L. Marasco; T. L. Lee; K. D. Breneman; D. T. Keane; M. J. Bedzyk

doi:10.1016/S0039-6028(00)00508-2

Structure of a passivated Ge surface prepared from aqueous solution

P. F. Lyman^*, O. Sakata, D. L. Marasco, T. L. Lee, K. D. Breneman, D. T. Keane, M. J. Bedzyk

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH₄)₂S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeS_x layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

Original language	English (US)
Pages (from-to)	L594-L598
Journal	Surface Science
Volume	462
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(00)00508-2
State	Published - Aug 10 2000

Funding

The authors gratefully acknowledge the help of P. Baldo in acquiring the RBS spectra. This work was supported by the US Department of Energy under Contract No. W-31-109-ENG-38 to Argonne National Laboratory and Contract DE-F02-96ER45588 to Northwestern University, and by the National Science Foundation under Contracts No. DMR-9632472 to the MRC at Northwestern University, DMR-9632593 and DMR-9973436 to MJB, and DMR-9304725 to DND, and by the State of Illinois under Contract No. IBHE HECA NWU 96 to DND.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Structure of a passivated Ge surface prepared from aqueous solution",

abstract = "The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.",

author = "Lyman, \{P. F.\} and O. Sakata and Marasco, \{D. L.\} and Lee, \{T. L.\} and Breneman, \{K. D.\} and Keane, \{D. T.\} and Bedzyk, \{M. J.\}",

note = "Funding Information: The authors gratefully acknowledge the help of P. Baldo in acquiring the RBS spectra. This work was supported by the US Department of Energy under Contract No. W-31-109-ENG-38 to Argonne National Laboratory and Contract DE-F02-96ER45588 to Northwestern University, and by the National Science Foundation under Contracts No. DMR-9632472 to the MRC at Northwestern University, DMR-9632593 and DMR-9973436 to MJB, and DMR-9304725 to DND, and by the State of Illinois under Contract No. IBHE HECA NWU 96 to DND.",

year = "2000",

month = aug,

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doi = "10.1016/S0039-6028(00)00508-2",

language = "English (US)",

volume = "462",

pages = "L594--L598",

journal = "Surface Science",

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number = "1",

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TY - JOUR

T1 - Structure of a passivated Ge surface prepared from aqueous solution

AU - Lyman, P. F.

AU - Sakata, O.

AU - Marasco, D. L.

AU - Lee, T. L.

AU - Breneman, K. D.

AU - Keane, D. T.

AU - Bedzyk, M. J.

N1 - Funding Information: The authors gratefully acknowledge the help of P. Baldo in acquiring the RBS spectra. This work was supported by the US Department of Energy under Contract No. W-31-109-ENG-38 to Argonne National Laboratory and Contract DE-F02-96ER45588 to Northwestern University, and by the National Science Foundation under Contracts No. DMR-9632472 to the MRC at Northwestern University, DMR-9632593 and DMR-9973436 to MJB, and DMR-9304725 to DND, and by the State of Illinois under Contract No. IBHE HECA NWU 96 to DND.

PY - 2000/8/10

Y1 - 2000/8/10

N2 - The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

AB - The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)2S solutions of various concentrations at 80 °C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature.

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U2 - 10.1016/S0039-6028(00)00508-2

DO - 10.1016/S0039-6028(00)00508-2

M3 - Article

AN - SCOPUS:0034245338

SN - 0039-6028

VL - 462

SP - L594-L598

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Structure of a passivated Ge surface prepared from aqueous solution

Abstract

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