Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3

J. Chen*, L. A. Wills, B. W. Wessels, D. L. Schulz, T. J. Marks

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

21 Scopus citations


BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

Original languageEnglish (US)
Pages (from-to)701-703
Number of pages3
JournalJournal of Electronic Materials
Issue number6
StatePublished - Jun 1993


  • BaTiO/LaAlO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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