Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3

J. Chen; L. A. Wills; B. W. Wessels; D. L. Schulz; T. J. Marks

doi:10.1007/BF02666421

Structure of organometallic chemical vapor deposited BaTiO₃ thin films on LaAIO₃

J. Chen^*, L. A. Wills, B. W. Wessels, D. L. Schulz, T. J. Marks

^*Corresponding author for this work

Research output: Contribution to journal › Letter › peer-review

23 Scopus citations

Abstract

BaTiO₃ thin films grown on LaA1O₃ by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

Original language	English (US)
Pages (from-to)	701-703
Number of pages	3
Journal	Journal of Electronic Materials
Volume	22
Issue number	6
DOIs	https://doi.org/10.1007/BF02666421
State	Published - Jun 1993

Keywords

BaTiO/LaAlO
HRTEM
OMCVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/BF02666421

Cite this

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title = "Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3",

abstract = "BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.",

keywords = "BaTiO/LaAlO, HRTEM, OMCVD",

author = "J. Chen and Wills, {L. A.} and Wessels, {B. W.} and Schulz, {D. L.} and Marks, {T. J.}",

year = "1993",

month = jun,

doi = "10.1007/BF02666421",

language = "English (US)",

volume = "22",

pages = "701--703",

journal = "Journal of Electronic Materials",

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T1 - Structure of organometallic chemical vapor deposited BaTiO3 thin films on LaAIO3

AU - Chen, J.

AU - Wills, L. A.

AU - Wessels, B. W.

AU - Schulz, D. L.

AU - Marks, T. J.

PY - 1993/6

Y1 - 1993/6

N2 - BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

AB - BaTiO3 thin films grown on LaA1O3 by organometallic chemical vapor deposition were characterized with cross-sectional high resolution transmission electron microscopy. Epitaxy was confirmed for the films grown on (100) oriented substrates. The films displayed an a axis orientation. The interface between the film and substrate was nearly atomically abrupt. Partial relaxation of the films was observed as a result of misfit dislocation formation.

KW - BaTiO/LaAlO

KW - HRTEM

KW - OMCVD

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U2 - 10.1007/BF02666421

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EP - 703

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JF - Journal of Electronic Materials

IS - 6

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