Structure of Si(100)-(2×1) surface using UHV transmission electron diffraction

Ganesh Jayaram; P. Xu; L. D. Marks

doi:10.1103/PhysRevLett.71.3489

Structure of Si(100)-(2×1) surface using UHV transmission electron diffraction

Ganesh Jayaram^*, P. Xu, L. D. Marks

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

82 Scopus citations

Abstract

Details of the atomic structure for the Si(100)-(2×1) surface using UHV transmission electron diffraction are described. Reliability factor minimizations of the dynamical diffraction intensities establish conclusively the asymmetry in the structure. Fits performed using multilayer subsurface relaxations to match analytical strain solutions demonstrate the existence of long range subsurface strain fields extending up to six layers into the bulk.

Original language	English (US)
Pages (from-to)	3489-3492
Number of pages	4
Journal	Physical review letters
Volume	71
Issue number	21
DOIs	https://doi.org/10.1103/PhysRevLett.71.3489
State	Published - 1993

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.71.3489

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title = "Structure of Si(100)-(2×1) surface using UHV transmission electron diffraction",

abstract = "Details of the atomic structure for the Si(100)-(2×1) surface using UHV transmission electron diffraction are described. Reliability factor minimizations of the dynamical diffraction intensities establish conclusively the asymmetry in the structure. Fits performed using multilayer subsurface relaxations to match analytical strain solutions demonstrate the existence of long range subsurface strain fields extending up to six layers into the bulk.",

author = "Ganesh Jayaram and P. Xu and Marks, {L. D.}",

year = "1993",

doi = "10.1103/PhysRevLett.71.3489",

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AU - Marks, L. D.

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N2 - Details of the atomic structure for the Si(100)-(2×1) surface using UHV transmission electron diffraction are described. Reliability factor minimizations of the dynamical diffraction intensities establish conclusively the asymmetry in the structure. Fits performed using multilayer subsurface relaxations to match analytical strain solutions demonstrate the existence of long range subsurface strain fields extending up to six layers into the bulk.

AB - Details of the atomic structure for the Si(100)-(2×1) surface using UHV transmission electron diffraction are described. Reliability factor minimizations of the dynamical diffraction intensities establish conclusively the asymmetry in the structure. Fits performed using multilayer subsurface relaxations to match analytical strain solutions demonstrate the existence of long range subsurface strain fields extending up to six layers into the bulk.

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Structure of Si(100)-(2×1) surface using UHV transmission electron diffraction

Abstract

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