Structure of Si(100)-(2×1) surface using UHV transmission electron diffraction

Ganesh Jayaram*, P. Xu, L. D. Marks

*Corresponding author for this work

Research output: Contribution to journalArticle

81 Scopus citations

Abstract

Details of the atomic structure for the Si(100)-(2×1) surface using UHV transmission electron diffraction are described. Reliability factor minimizations of the dynamical diffraction intensities establish conclusively the asymmetry in the structure. Fits performed using multilayer subsurface relaxations to match analytical strain solutions demonstrate the existence of long range subsurface strain fields extending up to six layers into the bulk.

Original languageEnglish (US)
Pages (from-to)3489-3492
Number of pages4
JournalPhysical review letters
Volume71
Issue number21
DOIs
StatePublished - Jan 1 1993

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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