Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

A. R. Krauss; O. Auciello; J. Im; V. Smentkowski; D. M. Gruen; E. A. Irene; R. P.H. Chang

doi:10.1080/10584589708221712

Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

A. R. Krauss^*, O. Auciello, J. Im, V. Smentkowski, D. M. Gruen, E. A. Irene, R. P.H. Chang

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi₂Ta₂O₉ (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi₂O₂)²⁺ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

Original language	English (US)
Pages (from-to)	351-368
Number of pages	18
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221712
State	Published - 1997

Funding

of Basic Energy Sciences, under contract W-3 1-109-ENG-38, the This research is supported by the U.S. Department of Energy, Office Office of Naval Research under Contract N00014-89-J-1178. National Science Foundation under Contract DMR 942-2 182 and the

Keywords

Ferroelectric
Films
In situ
Ion scattering
Real-time
Spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589708221712

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@article{2815f7791f1f410590766732f45ae0ef,

title = "Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis",

abstract = "Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi2O2)2+ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.",

keywords = "Ferroelectric, Films, In situ, Ion scattering, Real-time, Spectroscopy",

author = "Krauss, {A. R.} and O. Auciello and J. Im and V. Smentkowski and Gruen, {D. M.} and Irene, {E. A.} and Chang, {R. P.H.}",

note = "Funding Information: of Basic Energy Sciences, under contract W-3 1-109-ENG-38, the Funding Information: This research is supported by the U.S. Department of Energy, Office Funding Information: Office of Naval Research under Contract N00014-89-J-1178. Funding Information: National Science Foundation under Contract DMR 942-2 182 and the",

year = "1997",

doi = "10.1080/10584589708221712",

language = "English (US)",

volume = "18",

pages = "351--368",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

AU - Krauss, A. R.

AU - Auciello, O.

AU - Im, J.

AU - Smentkowski, V.

AU - Gruen, D. M.

AU - Irene, E. A.

AU - Chang, R. P.H.

N1 - Funding Information: of Basic Energy Sciences, under contract W-3 1-109-ENG-38, the Funding Information: This research is supported by the U.S. Department of Energy, Office Funding Information: Office of Naval Research under Contract N00014-89-J-1178. Funding Information: National Science Foundation under Contract DMR 942-2 182 and the

PY - 1997

Y1 - 1997

N2 - Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi2O2)2+ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

AB - Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi2O2)2+ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

KW - Ferroelectric

KW - Films

KW - In situ

KW - Ion scattering

KW - Real-time

KW - Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=11544365491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11544365491&partnerID=8YFLogxK

U2 - 10.1080/10584589708221712

DO - 10.1080/10584589708221712

M3 - Article

AN - SCOPUS:11544365491

SN - 1058-4587

VL - 18

SP - 351

EP - 368

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

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