Studies of ferroelectric film growth processes using in situ, real-time ion beam analysis

A. R. Krauss*, O. Auciello, J. Im, V. Smentkowski, D. M. Gruen, E. A. Irene, R. P.H. Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Further technological advances in ferroelectric thin film-based devices requires to achieve a better understanding of the growth of ferroelectric and electrode layers, including oxygen incorporation during growth and other parameters. This can be achieved using in situ, real-time characterization techniques. We are currently using time-of-fligh ion scattering and recoil spectroscopy (TOF-ISARS) to study film growth processes. Results discussed in this review concerns initial studies of the growth of SrBi2Ta2O9 (SBT) films. As an example, the potential of TOF-ISARS has been demonstrated by determining that the layered SBT films are terminated in an incomplete (Bi2O2)2+ layer with an oxygen plane as the top most layer. This results and the implications for understanding the resistant to fatigue of Pt/SBT/Pt capacitors are discussed in this review.

Original languageEnglish (US)
Pages (from-to)351-368
Number of pages18
JournalIntegrated Ferroelectrics
Issue number1-4
StatePublished - 1997


  • Ferroelectric
  • Films
  • In situ
  • Ion scattering
  • Real-time
  • Spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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