Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis

O. Auciello; A. R. Krauss; J. Im; D. M. Gruen; E. A. Irene; R P H Chang; G. E. McGuire

doi:10.1063/1.117554

Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi₂Ta₂O₉ layered perovskites via in situ, real-time ion-beam analysis

O. Auciello^*, A. R. Krauss, J. Im, D. M. Gruen, E. A. Irene, R P H Chang, G. E. McGuire

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

In situ, real-time studies of layered perovskite SrBi₂Ta₂O₉ (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi₂O²)²⁺ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.

Original language	English (US)
Pages (from-to)	2671-2673
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	18
DOIs	https://doi.org/10.1063/1.117554
State	Published - Oct 28 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis",

abstract = "In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.",

author = "O. Auciello and Krauss, {A. R.} and J. Im and Gruen, {D. M.} and Irene, {E. A.} and Chang, {R P H} and McGuire, {G. E.}",

year = "1996",

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doi = "10.1063/1.117554",

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T1 - Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi2Ta2O9 layered perovskites via in situ, real-time ion-beam analysis

AU - Auciello, O.

AU - Krauss, A. R.

AU - Im, J.

AU - Gruen, D. M.

AU - Irene, E. A.

AU - Chang, R P H

AU - McGuire, G. E.

PY - 1996/10/28

Y1 - 1996/10/28

N2 - In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.

AB - In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.

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Studies of film growth processes and surface structural characterization of ferroelectric memory-compatible SrBi₂Ta₂O₉ layered perovskites via in situ, real-time ion-beam analysis

Abstract

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