In situ, real-time studies of layered perovskite SrBi2Ta2O9 (SBT) film growth processes were performed using a time-of-flight ion scattering and recoil spectroscopy (TOF ISARS) technique. These studies revealed two important features related to the synthesis of SBT films via ion-beam sputter-deposition, namely: (a) atomic oxygen originating from a multicomponent SBT target during the sputtering process is incorporated in the growing film more efficiently than molecular oxygen; and (b) the SBT surface appears to be terminated in an incomplete (Bi2O2)2+ layer with a top surface of oxygen atoms, which may be responsible for the high resistance to polarization fatigue exhibited by Pt/SBT/Pt capacitors.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Oct 28 1996|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)