Abstract
The 'etch pit' observation technique has been developed for the study of the crystalline perfection of mono and multilayer heterostructure. Before the selective revelation the authors formed a chemical bevel with a very low angle. By this technique, the presence of misfit dislocation at the interface may be determined.
Translated title of the contribution | Study of Defects in the Heteroepitaxial Layers of III-V Materials by Metallographic Analysis on a Chemical Bevel. |
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Original language | French |
Title of host publication | Journal de Physique (Paris), Colloque |
Pages | 409-414 |
Number of pages | 6 |
Edition | 9 |
State | Published - Sep 1983 |
Publication series
Name | Journal de Physique (Paris), Colloque |
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Number | 9 |
Volume | 44 |
ISSN (Print) | 0449-1947 |
ASJC Scopus subject areas
- General Engineering