Abstract
We report the post-growth thermal annealing and the subsequent phase transition of Ga2 O3 grown on c-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). We demonstrated the post-growth thermal annealing at temperatures higher than 900◦ C under N2 ambience, by either in situ or ex situ thermal annealing, can induce phase transition from nominally metastable κ-to thermodynamically stable β-phase. This was analyzed by structural characterizations such as high-resolution scanning transmission electron microscopy and x-ray diffraction. The highly resistive as-grown Ga2 O3 epitaxial layer becomes conductive after annealing at 1000◦ C. Furthermore, we demonstrate that in situ annealing can lead to a crack-free β-Ga2 O3.
Original language | English (US) |
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Article number | 17 |
Pages (from-to) | 1-8 |
Number of pages | 8 |
Journal | Photonics |
Volume | 8 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2021 |
Keywords
- Ga O
- MOCVD
- Phase transition
- Thermal annealing
- Thin films
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Instrumentation
- Radiology Nuclear Medicine and imaging