STUDY OF THE IMPURITY REDISTRIBUTION IN InP METALORGANIC CHEMICAL VAPOR DEPOSITED EPILAYERS.

A. M. Huber*, M. Razeghi, G. Morillot

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper reports new experimental results using secondary ion mass spectrometry analysis for quantitative determination of impurities in MOCVD InP layers. Mg, Mn, Fe, Cr and Si accumulation at the substrate-epilayer interface was observed. The origin of these elements was determined. The major source of impurities was the adsorption of atoms on the substrate surface during chemical etching prior to epitaxy.

Original languageEnglish (US)
Title of host publicationInstitute of Physics Conference Series
EditorsB. de Cremoux
Pages223-228
Number of pages6
Edition74
StatePublished - Dec 1 1985

Publication series

NameInstitute of Physics Conference Series
Number74
ISSN (Print)0373-0751

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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