Study on Te inclusions migration in CdZnTe single crystals during annealing under Cd/Zn vapor

Yan Zhou, Wan Qi Jie*, Yihui He, Yun Lin, Xin Guo, Hui Min Liu, Tao Wang, Ya Dong Xu, Gang Qiang Zha

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The variation of density and diameter of Te inclusions in indium-doped Cd 0.9 Zn 0.1 Te (CZT) single crystals during annealing under Cd/Zn vapor were studied via IR microscopy observation. The results indicated that the density of Te inclusions distributed homogeneously before annealing, while after annealing, the density of Te inclusions increased for about one order near the surface, but decreased for one order inside, and the density increased gradually along the direction of temperature gradient. The diameter of Te inclusions was mainly between 1 μm and 25 μm before annealing, while those with the diameter <45 μm near the wafer's surface and those <5 μm and >25 μm inside increased notably after annealing. The reason for the above variation was determined by Te inclusions migration along the direction of temperature gradient. And during the migration, Te inclusions grew via incorporating with those with similar diameter and Ostwald ripening among those with comparatively different diameter. But the ripening was not sufficient so that many smaller Te inclusions remained in the annealed samples.

Original languageEnglish (US)
Pages (from-to)7135-7138
Number of pages4
JournalGongneng Cailiao/Journal of Functional Materials
Volume45
Issue number7
DOIs
StatePublished - Jan 1 2014

Keywords

  • Annealing
  • Cd/Zn alloy
  • CdZnTe
  • Migration mechanism
  • Te inclusions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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