Study on the annealed ZnO films grown by plasma-assisted MOCVD

Jin Zhong Wang*, Xin Qiang Wang, Jian Gang Wang, Xiu Ying Jiang, Shu Ren Yang, Guo Tong Du, Ding San Gao, Xiang Liu, Hui Cao, Jun Ying Xu, R. P H Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10-5/cm3, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.

Original languageEnglish (US)
Pages (from-to)502-503
Number of pages2
JournalGongneng Cailiao/Journal of Functional Materials
Volume32
Issue number5
StatePublished - Oct 1 2001

Keywords

  • Optical threshold
  • Photoluminescence
  • Plasma-assisted MOCVD
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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