Abstract
The ZnO thin films were grown on the (0001) surface of sapphire by plasma-assisted MOCVD. The resistivity, concentration of electron, mobility and optical lasing threshold of the films were investigated. The quality of the films is characterized by XRD and photo-luminescence spectrum before and after annealing. showing that the concentration of electron is 10-5/cm3, the optical lasing threshold is 0.0058 μJ, the full width at half height of XRD is 0.29 °, and the full width at half height of photoluminescence is 0.32 nm. It indicates that the films have very high quality.
Original language | English (US) |
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Pages (from-to) | 502-503 |
Number of pages | 2 |
Journal | Gongneng Cailiao/Journal of Functional Materials |
Volume | 32 |
Issue number | 5 |
State | Published - Oct 2001 |
Keywords
- Optical threshold
- Photoluminescence
- Plasma-assisted MOCVD
- X-ray diffraction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering