Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

B. Lane; D. Wu; H. J. Yi; J. Diaz; A. Rybaltowski; S. Kim; M. Erdtmann; H. Jeon; M. Razeghi

doi:10.1063/1.118559

Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

B. Lane^*, D. Wu, H. J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

InAs_xSb_1-x/InP_1-x-yAS_xSb _y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

Original language	English (US)
Pages (from-to)	1447-1449
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	11
DOIs	https://doi.org/10.1063/1.118559
State	Published - Mar 17 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure",

abstract = "InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.",

author = "B. Lane and D. Wu and Yi, {H. J.} and J. Diaz and A. Rybaltowski and S. Kim and M. Erdtmann and H. Jeon and M. Razeghi",

year = "1997",

month = mar,

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doi = "10.1063/1.118559",

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volume = "70",

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TY - JOUR

T1 - Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

AU - Lane, B.

AU - Wu, D.

AU - Yi, H. J.

AU - Diaz, J.

AU - Rybaltowski, A.

AU - Kim, S.

AU - Erdtmann, M.

AU - Jeon, H.

AU - Razeghi, M.

PY - 1997/3/17

Y1 - 1997/3/17

N2 - InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

AB - InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

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DO - 10.1063/1.118559

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

Abstract

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