Abstract
InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.
Original language | English (US) |
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Pages (from-to) | 1447-1449 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 11 |
DOIs | |
State | Published - Mar 17 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)