Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

B. Lane; Donghai Wu; H. J. Yi; J. Diaz; A. Rybaltowski; S. Kim; M. Erdtmann; H. Jeon; Manijeh Razeghi

doi:10.1063/1.118559

Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

B. Lane^*, Donghai Wu, H. J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon, Manijeh Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article

8 Scopus citations

Abstract

InAs_xSb_1-x/InP_1-x-yAS_xSb _y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

Original language	English (US)
Pages (from-to)	1447-1449
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	11
DOIs	https://doi.org/10.1063/1.118559
State	Published - Mar 17 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Lane, B., Wu, D., Yi, H. J., Diaz, J., Rybaltowski, A., Kim, S., Erdtmann, M., Jeon, H., & Razeghi, M. (1997). Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure. Applied Physics Letters, 70(11), 1447-1449. https://doi.org/10.1063/1.118559

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abstract = "InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.",

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doi = "10.1063/1.118559",

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AU - Lane, B.

AU - Wu, Donghai

AU - Yi, H. J.

AU - Diaz, J.

AU - Rybaltowski, A.

AU - Kim, S.

AU - Erdtmann, M.

AU - Jeon, H.

AU - Razeghi, Manijeh

PY - 1997/3/17

Y1 - 1997/3/17

N2 - InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

AB - InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

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