Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure

B. Lane*, Donghai Wu, H. J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

InAsxSb1-x/InP1-x-yASxSb y double heterostructures have been grown on InAs substrates by metal-organic chemical vapor deposition. The minority carrier leakage to the cladding layers was studied with photoluminescence measurements on the InAsSb/InPAsSb double heterostructures. A carrier leakage model is used to extract parameters related to the leakage current (diffusion-coefficient and length) from experimental results. Using the obtained parameters, the temperature dependence of the threshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results.

Original languageEnglish (US)
Pages (from-to)1447-1449
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number11
DOIs
StatePublished - Mar 17 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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