Study on the point defects in Te-riched CdTe crystals

Hui Min Liu, Tao Wang*, Yihui He, Yan Zhou, Hao Zhang, Ya Dong Xu, Gang Qiang Zha, Wan Qi Jie

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In consideration of the possible point defects in Te-riched CdTe crystals, a thermodynamic equilibrium model for CdTe annealed under Te vapor was established based on the defect chemistry theory, native point defects, such as VCd, Cdi, Tei and TeCd were included. Point defects concentration and Fermi level were both calculated using the mass action law and quasi-chemical equations. The results systematically reveal the relationship between the point defects concentration, Fermi level, Te vapor pressure and annealing temperature. The Fermi level was pinned only when TeCd concentration was very large.

Original languageEnglish (US)
Pages (from-to)1885-1890
Number of pages6
JournalRengong Jingti Xuebao/Journal of Synthetic Crystals
Volume43
Issue number8
StatePublished - Aug 1 2014

Keywords

  • CdTe
  • Defect chemistry
  • Fermi level
  • Point defect

ASJC Scopus subject areas

  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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  • Cite this

    Liu, H. M., Wang, T., He, Y., Zhou, Y., Zhang, H., Xu, Y. D., Zha, G. Q., & Jie, W. Q. (2014). Study on the point defects in Te-riched CdTe crystals. Rengong Jingti Xuebao/Journal of Synthetic Crystals, 43(8), 1885-1890.