Study on the transport properties of MnGe(As 1-xP x) 2 grown on GaAs(1 0 0)

Y. Cui; J. Song; J. Lee; Y. Kim; J. B. Ketterson; S. Cho

doi:10.1016/j.jmmm.2004.09.046

Study on the transport properties of MnGe(As _1-xP _x) ₂ grown on GaAs(1 0 0)

Y. Cui, J. Song, J. Lee, Y. Kim, J. B. Ketterson, S. Cho

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have successfully grown MnGe(As _1-xP _x) ₂ on GaAs(1 0 0) by molecular beam epitaxy (MBE) with a P _3d/As _2p XPS peak ratio ranging from 2.2 to 8.5. The transport properties of these MnGe(As _1-xP _x) ₂ films have been studied by Hall measurement and resistance measurement. The resistance measurements suggest the samples are semiconductors. The Hall slopes at high fields are positive, indicating carriers in the film are p-type. All the samples show anomalous Hall effects with negative Hall resistance, and the Hall resistances increase rather than decrease with temperature. Magnetoresistances (MRs) have positive sign and its MR ratio increases with temperature in the range from 300 to 380°C.

Original language	English (US)
Pages (from-to)	99-102
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	286
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jmmm.2004.09.046
State	Published - Feb 2005

Keywords

GaAs(100)
Hall measurement
Magnetoresistance
MnGe(As P )
Molecular beam epitaxy
Transport property

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1016/j.jmmm.2004.09.046

Cite this

@article{9aee2416c1504226b742d63129fa1cac,

title = "Study on the transport properties of MnGe(As 1-xP x) 2 grown on GaAs(1 0 0)",

abstract = "We have successfully grown MnGe(As 1-xP x) 2 on GaAs(1 0 0) by molecular beam epitaxy (MBE) with a P 3d/As 2p XPS peak ratio ranging from 2.2 to 8.5. The transport properties of these MnGe(As 1-xP x) 2 films have been studied by Hall measurement and resistance measurement. The resistance measurements suggest the samples are semiconductors. The Hall slopes at high fields are positive, indicating carriers in the film are p-type. All the samples show anomalous Hall effects with negative Hall resistance, and the Hall resistances increase rather than decrease with temperature. Magnetoresistances (MRs) have positive sign and its MR ratio increases with temperature in the range from 300 to 380°C.",

keywords = "GaAs(100), Hall measurement, Magnetoresistance, MnGe(As P ), Molecular beam epitaxy, Transport property",

author = "Y. Cui and J. Song and J. Lee and Y. Kim and Ketterson, {J. B.} and S. Cho",

note = "Funding Information: AFOSR Chalcopyrite MURI Grant #F49620-01-1-0428, DARPA Grant #N00014-02-1-0887 and NSF Grant #ECS-0224210 are acknowledged.",

year = "2005",

month = feb,

doi = "10.1016/j.jmmm.2004.09.046",

language = "English (US)",

volume = "286",

pages = "99--102",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Study on the transport properties of MnGe(As 1-xP x) 2 grown on GaAs(1 0 0)

AU - Cui, Y.

AU - Song, J.

AU - Lee, J.

AU - Kim, Y.

AU - Ketterson, J. B.

AU - Cho, S.

N1 - Funding Information: AFOSR Chalcopyrite MURI Grant #F49620-01-1-0428, DARPA Grant #N00014-02-1-0887 and NSF Grant #ECS-0224210 are acknowledged.

PY - 2005/2

Y1 - 2005/2

N2 - We have successfully grown MnGe(As 1-xP x) 2 on GaAs(1 0 0) by molecular beam epitaxy (MBE) with a P 3d/As 2p XPS peak ratio ranging from 2.2 to 8.5. The transport properties of these MnGe(As 1-xP x) 2 films have been studied by Hall measurement and resistance measurement. The resistance measurements suggest the samples are semiconductors. The Hall slopes at high fields are positive, indicating carriers in the film are p-type. All the samples show anomalous Hall effects with negative Hall resistance, and the Hall resistances increase rather than decrease with temperature. Magnetoresistances (MRs) have positive sign and its MR ratio increases with temperature in the range from 300 to 380°C.

AB - We have successfully grown MnGe(As 1-xP x) 2 on GaAs(1 0 0) by molecular beam epitaxy (MBE) with a P 3d/As 2p XPS peak ratio ranging from 2.2 to 8.5. The transport properties of these MnGe(As 1-xP x) 2 films have been studied by Hall measurement and resistance measurement. The resistance measurements suggest the samples are semiconductors. The Hall slopes at high fields are positive, indicating carriers in the film are p-type. All the samples show anomalous Hall effects with negative Hall resistance, and the Hall resistances increase rather than decrease with temperature. Magnetoresistances (MRs) have positive sign and its MR ratio increases with temperature in the range from 300 to 380°C.

KW - GaAs(100)

KW - Hall measurement

KW - Magnetoresistance

KW - MnGe(As P )

KW - Molecular beam epitaxy

KW - Transport property

UR - http://www.scopus.com/inward/record.url?scp=11444256921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11444256921&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2004.09.046

DO - 10.1016/j.jmmm.2004.09.046

M3 - Article

AN - SCOPUS:11444256921

SN - 0304-8853

VL - 286

SP - 99

EP - 102

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - SPEC. ISS.

ER -