Sub-λ/10 spot size in semiconductor solid immersion lens microscopy

Mohamadreza G. Banaee*, M. Selim Ünlü, Bennett B. Goldberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The angular spectrum of radially polarized Laguerre-Gaussian beams was tailored by an annular aperture in a semiconductor solid immersion lens microscope. The radii of two concentric rings in the amplitude aperture were optimized by a multi-objective particle swarm optimization algorithm. A GaAs solid immersion lens with NA=3.4 was used in the numerical calculation and a spot size of 98 nm (<λ/10) at a wavelength of 1064 nm illumination was obtained.

Original languageEnglish (US)
Pages (from-to)108-111
Number of pages4
JournalOptics Communications
Volume315
DOIs
StatePublished - Jan 1 2014

Keywords

  • Apodization
  • High-resolution imaging
  • Optical microscopy
  • Particle swarm optimization
  • Solid immersion lens

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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