Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography

Alyson V. Whitney; Benjamin D. Myers; Richard P Van Duyne

doi:10.1021/nl049345w

Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography

Alyson V. Whitney, Benjamin D. Myers, Richard P Van Duyne^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

127 Scopus citations

Abstract

Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.

Original language	English (US)
Pages (from-to)	1507-1511
Number of pages	5
Journal	Nano Letters
Volume	4
Issue number	8
DOIs	https://doi.org/10.1021/nl049345w
State	Published - Aug 1 2004

ASJC Scopus subject areas

Materials Science(all)

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10.1021/nl049345w

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@article{4a5b824f7b0545acbad17b95ce2dfc53,

title = "Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography",

abstract = "Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.",

author = "Whitney, {Alyson V.} and Myers, {Benjamin D.} and {Van Duyne}, {Richard P}",

year = "2004",

month = aug,

day = "1",

doi = "10.1021/nl049345w",

language = "English (US)",

volume = "4",

pages = "1507--1511",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography

AU - Whitney, Alyson V.

AU - Myers, Benjamin D.

AU - Van Duyne, Richard P

PY - 2004/8/1

Y1 - 2004/8/1

N2 - Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.

AB - Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.

UR - http://www.scopus.com/inward/record.url?scp=4444306296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444306296&partnerID=8YFLogxK

U2 - 10.1021/nl049345w

DO - 10.1021/nl049345w

M3 - Article

AN - SCOPUS:4444306296

VL - 4

SP - 1507

EP - 1511

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 8

ER -