Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.
ASJC Scopus subject areas
- Materials Science(all)