Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography

Alyson V. Whitney, Benjamin D. Myers, Richard P Van Duyne*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

127 Scopus citations

Abstract

Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane, triangular cross-section nanopores. Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated. The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.

Original languageEnglish (US)
Pages (from-to)1507-1511
Number of pages5
JournalNano Letters
Volume4
Issue number8
DOIs
StatePublished - Aug 1 2004

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Sub-100 nm triangular nanopores fabricated with the reactive ion etching variant of nanosphere lithography and angle-resolved nanosphere lithography'. Together they form a unique fingerprint.

Cite this