Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

Boyang Liu, Seng-Tiong Ho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2008
PublisherOptical Society of America
ISBN (Print)9781557528599
StatePublished - Jan 1 2008
EventConference on Lasers and Electro-Optics, CLEO 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Other

OtherConference on Lasers and Electro-Optics, CLEO 2008
CountryUnited States
CitySan Jose, CA
Period5/4/085/9/08

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Liu, B., & Ho, S-T. (2008). Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2. In Conference on Lasers and Electro-Optics, CLEO 2008 Optical Society of America.