Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

Boyang Liu; Seng Tiong Ho

Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO₂

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO₂ is presented. The sample InP compound etching selectivity to ZrO₂ is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.

Original language	English (US)
Title of host publication	Quantum Electronics and Laser Science Conference, QELS 2008
Publisher	Optical Society of America
ISBN (Print)	9781557528599
State	Published - 2008
Event	Quantum Electronics and Laser Science Conference, QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Quantum Electronics and Laser Science Conference, QELS 2008
Country/Territory	United States
City	San Jose, CA
Period	5/4/08 → 5/9/08

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Cite this

@inproceedings{edcdd4a751d34534a846646d6a44e062,

title = "Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2",

abstract = "A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.",

author = "Boyang Liu and Ho, {Seng Tiong}",

year = "2008",

language = "English (US)",

isbn = "9781557528599",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America",

booktitle = "Quantum Electronics and Laser Science Conference, QELS 2008",

note = "Quantum Electronics and Laser Science Conference, QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",

}

TY - GEN

T1 - Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

AU - Liu, Boyang

AU - Ho, Seng Tiong

PY - 2008

Y1 - 2008

N2 - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.

AB - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm.

UR - http://www.scopus.com/inward/record.url?scp=84898935335&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898935335&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84898935335

SN - 9781557528599

T3 - Optics InfoBase Conference Papers

BT - Quantum Electronics and Laser Science Conference, QELS 2008

PB - Optical Society of America

T2 - Quantum Electronics and Laser Science Conference, QELS 2008

Y2 - 4 May 2008 through 9 May 2008

ER -