Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

Boyang Liu; Seng-Tiong Ho

doi:10.1109/CLEO.2008.4552164

Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO₂

Boyang Liu^*, Seng-Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO₂ is presented. The sample InP compound etching selectivity to ZrO₂ is over 13:1 with highest aspect ratio of 3 5:1. The smallest feature is 9nm.

Original language	English (US)
Title of host publication	2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs	https://doi.org/10.1109/CLEO.2008.4552164
State	Published - Sep 15 2008
Event	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008

Other

Other	Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Country/Territory	United States
City	San Jose, CA
Period	5/4/08 → 5/9/08

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CLEO.2008.4552164

Cite this

@inproceedings{17f742efa5984df58fc95e1f18888237,

title = "Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2",

abstract = "A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 3 5:1. The smallest feature is 9nm.",

author = "Boyang Liu and Seng-Tiong Ho",

year = "2008",

month = sep,

day = "15",

doi = "10.1109/CLEO.2008.4552164",

language = "English (US)",

isbn = "1557528594",

booktitle = "2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS",

note = "Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",

}

Liu, B & Ho, S-T 2008, Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO₂. in 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS., 4552164, Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008, San Jose, CA, United States, 5/4/08. https://doi.org/10.1109/CLEO.2008.4552164

TY - GEN

T1 - Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

AU - Liu, Boyang

AU - Ho, Seng-Tiong

PY - 2008/9/15

Y1 - 2008/9/15

N2 - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 3 5:1. The smallest feature is 9nm.

AB - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 3 5:1. The smallest feature is 9nm.

UR - http://www.scopus.com/inward/record.url?scp=51349137072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349137072&partnerID=8YFLogxK

U2 - 10.1109/CLEO.2008.4552164

DO - 10.1109/CLEO.2008.4552164

M3 - Conference contribution

AN - SCOPUS:51349137072

SN - 1557528594

SN - 9781557528599

BT - 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

T2 - Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008

Y2 - 4 May 2008 through 9 May 2008

ER -