Sub-10nm nanolithography and direct pattern transfer on III-V compound semiconductor using sol-gel derived ZrO2

Boyang Liu*, Seng-Tiong Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 3 5:1. The smallest feature is 9nm.

Original languageEnglish (US)
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - Sep 15 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Other

OtherConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period5/4/085/9/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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