Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO2

Boyang Iiu; Seng Tiong Ho

doi:10.1109/QELS.2008.4552673

Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO₂

Boyang Iiu^*, Seng Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO₂ is presented. The sample InP compound etching selectivity to ZrO₂ is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.

Original language	English (US)
Title of host publication	2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs	https://doi.org/10.1109/QELS.2008.4552673
State	Published - 2008
Event	Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008

Publication series

Name	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

Other

Other	Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
Country/Territory	United States
City	San Jose, CA
Period	5/4/08 → 5/9/08

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1109/QELS.2008.4552673

Cite this

Iiu, B., & Ho, S. T. (2008). Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO₂. In 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS Article 4552673 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series). https://doi.org/10.1109/QELS.2008.4552673

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title = "Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO2",

abstract = "A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.",

author = "Boyang Iiu and Ho, {Seng Tiong}",

year = "2008",

doi = "10.1109/QELS.2008.4552673",

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series = "Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series",

booktitle = "2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS",

note = "Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",

}

Iiu, B & Ho, ST 2008, Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO₂. in 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS., 4552673, Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series, Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008, San Jose, CA, United States, 5/4/08. https://doi.org/10.1109/QELS.2008.4552673

Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO₂. / Iiu, Boyang; Ho, Seng Tiong.
2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS. 2008. 4552673 (Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.

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