Abstract
A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.
Original language | English (US) |
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Title of host publication | 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS |
DOIs | |
State | Published - Sep 15 2008 |
Event | Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008 |
Other
Other | Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 |
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Country | United States |
City | San Jose, CA |
Period | 5/4/08 → 5/9/08 |
ASJC Scopus subject areas
- Physics and Astronomy(all)