Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO2

Boyang Iiu; Seng-Tiong Ho

doi:10.1109/QELS.2008.4552673

Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO₂

Boyang Iiu^*, Seng-Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO₂ is presented. The sample InP compound etching selectivity to ZrO₂ is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.

Original language	English (US)
Title of host publication	2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs	https://doi.org/10.1109/QELS.2008.4552673
State	Published - Sep 15 2008
Event	Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States Duration: May 4 2008 → May 9 2008

Other

Other	Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
Country	United States
City	San Jose, CA
Period	5/4/08 → 5/9/08

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1109/QELS.2008.4552673

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Cite this

@inproceedings{872bc1d28b274a1ab8f6f06389727b6b,

title = "Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO2",

abstract = "A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.",

author = "Boyang Iiu and Seng-Tiong Ho",

year = "2008",

month = sep,

day = "15",

doi = "10.1109/QELS.2008.4552673",

language = "English (US)",

isbn = "1557528594",

booktitle = "2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS",

note = "Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 ; Conference date: 04-05-2008 Through 09-05-2008",

}

Iiu, B & Ho, S-T 2008, Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO₂. in 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS., 4552673, Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008, San Jose, CA, United States, 5/4/08. https://doi.org/10.1109/QELS.2008.4552673

TY - GEN

T1 - Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO2

AU - Iiu, Boyang

AU - Ho, Seng-Tiong

PY - 2008/9/15

Y1 - 2008/9/15

N2 - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.

AB - A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.

UR - http://www.scopus.com/inward/record.url?scp=51349122259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349122259&partnerID=8YFLogxK

U2 - 10.1109/QELS.2008.4552673

DO - 10.1109/QELS.2008.4552673

M3 - Conference contribution

AN - SCOPUS:51349122259

SN - 1557528594

SN - 9781557528599

BT - 2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS

T2 - Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008

Y2 - 4 May 2008 through 9 May 2008

ER -