Sub-10nm nanolithography and direct pattern transfer on III-Y compound semiconductor using Sol-gel derived ZrO2

Boyang Iiu*, Seng-Tiong Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new approach for direct sub-10nm pattern transfer using spin-coated ZrO2 is presented. The sample InP compound etching selectivity to ZrO2 is over 13:1 with highest aspect ratio of 35:1. The smallest feature is 9nm. copy; 2008 Optical Society of America.

Original languageEnglish (US)
Title of host publication2008 Conference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS
DOIs
StatePublished - Sep 15 2008
EventConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Other

OtherConference on and Quantum Electronics and Laser Science Conference Lasers and Electro-Optics, QELS 2008
CountryUnited States
CitySan Jose, CA
Period5/4/085/9/08

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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