Sub-Poissonian shot noise of a high internal gain injection photon detector

Omer Gokalp Memis; Alex Katsnelson; Soon Cheol Kong; Hooman Mohseni; Minjun Yan; Shuang Zhang; Tim Hossain; Niu Jin; Ilesanmi Adesida

doi:10.1364/OE.16.012701

Sub-Poissonian shot noise of a high internal gain injection photon detector

Omer Gokalp Memis, Alex Katsnelson, Soon Cheol Kong, Hooman Mohseni^*, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, Ilesanmi Adesida

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 μm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.

Original language	English (US)
Pages (from-to)	12701-12706
Number of pages	6
Journal	Optics Express
Volume	16
Issue number	17
DOIs	https://doi.org/10.1364/OE.16.012701
State	Published - Aug 18 2008

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 μm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.",

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AU - Memis, Omer Gokalp

AU - Katsnelson, Alex

AU - Kong, Soon Cheol

AU - Mohseni, Hooman

AU - Yan, Minjun

AU - Zhang, Shuang

AU - Hossain, Tim

AU - Jin, Niu

AU - Adesida, Ilesanmi

PY - 2008/8/18

Y1 - 2008/8/18

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AB - The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 μm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.

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Sub-Poissonian shot noise of a high internal gain injection photon detector

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