TY - JOUR
T1 - Subsolidus phase relations in the Ga2O3-In2O3-SnO2 system
AU - Edwards, Doreen D.
AU - Mason, Thomas O.
PY - 1998/12
Y1 - 1998/12
N2 - Subsolidus phase relationships in the Ga2O3-In2O3-SnO2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3-xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4-4xIn4xSnn-4O2n-2 where n is an integer. An In2O3-SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000-1400°C.
AB - Subsolidus phase relationships in the Ga2O3-In2O3-SnO2 system were studied by X-ray diffraction over the temperature range 1250-1400°C. At 1250°C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3-xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4-4xIn4xSnn-4O2n-2 where n is an integer. An In2O3-SnO2 phase and Ga4SnO8 form at 1375°C but are not stable at 1250°C. GaInO3 did not form over the temperature range 1000-1400°C.
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U2 - 10.1111/j.1151-2916.1998.tb02769.x
DO - 10.1111/j.1151-2916.1998.tb02769.x
M3 - Article
AN - SCOPUS:0032301459
SN - 0002-7820
VL - 81
SP - 3285
EP - 3292
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
IS - 12
ER -