A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAsGaSb superlattice photodetectors. After etching of the GaSb substrate with a Cr O3 based solution, the quantum efficiency of the diodes presents Fabry-Ṕrot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 μm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2007|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)