Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors

Pierre Yves Delaunay, Binh Minh Nguyen, Darin Hofman, Manijeh Razeghi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAsGaSb superlattice photodetectors. After etching of the GaSb substrate with a Cr O3 based solution, the quantum efficiency of the diodes presents Fabry-Ṕrot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 μm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms.

Original languageEnglish (US)
Article number231106
JournalApplied Physics Letters
Volume91
Issue number23
DOIs
StatePublished - Dec 14 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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