Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors

Pierre Yves Delaunay; Binh Minh Nguyen; Darin Hofman; Manijeh Razeghi

doi:10.1063/1.2821834

Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors

Pierre Yves Delaunay, Binh Minh Nguyen, Darin Hofman, Manijeh Razeghi^*

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAsGaSb superlattice photodetectors. After etching of the GaSb substrate with a Cr O3 based solution, the quantum efficiency of the diodes presents Fabry-Ṕrot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 μm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms.

Original language	English (US)
Article number	231106
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2821834
State	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors",

abstract = "A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAsGaSb superlattice photodetectors. After etching of the GaSb substrate with a Cr O3 based solution, the quantum efficiency of the diodes presents Fabry-Ṕrot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 μm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms.",

author = "Delaunay, {Pierre Yves} and Nguyen, {Binh Minh} and Darin Hofman and Manijeh Razeghi",

year = "2007",

doi = "10.1063/1.2821834",

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AU - Delaunay, Pierre Yves

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AU - Hofman, Darin

AU - Razeghi, Manijeh

PY - 2007

Y1 - 2007

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AB - A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAsGaSb superlattice photodetectors. After etching of the GaSb substrate with a Cr O3 based solution, the quantum efficiency of the diodes presents Fabry-Ṕrot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5 μm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23 to 0.08 ms.

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Substrate removal for high quantum efficiency back side illuminated type-II InAsGaSb photodetectors

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