Subsurface dimerization in III-V semiconductor (001) surfaces

C. Kumpf; L. D. Marks; D. Ellis; D. Smilgies; E. Landemark; M. Nielsen; R. Feidenhans'l; J. Zegenhagen; O. Bunk; J. H. Zeysing; Y. Su; R. L. Johnson

doi:10.1103/PhysRevLett.86.3586

Subsurface dimerization in III-V semiconductor (001) surfaces

C. Kumpf, L. D. Marks, D. Ellis, D. Smilgies, E. Landemark, M. Nielsen, R. Feidenhans'l, J. Zegenhagen, O. Bunk, J. H. Zeysing, Y. Su, R. L. Johnson

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116 Scopus citations

Abstract

A unique model for the III-rich (001)-surface reconstruction of III-V semiconductors was established. The resulting model consists of subsurface III dimers and chains of atoms located at nonbulk sites along the [110]_bulk direction at the surface. The developed model explains the discrepancy between (4 × 1) symmetry found earlier in STM experiments and c(8 × 2) diffraction patterns.

Original language	English (US)
Pages (from-to)	3586-3589
Number of pages	4
Journal	Physical review letters
Volume	86
Issue number	16
DOIs	https://doi.org/10.1103/PhysRevLett.86.3586
State	Published - Apr 16 2001

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General Physics and Astronomy

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10.1103/PhysRevLett.86.3586

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title = "Subsurface dimerization in III-V semiconductor (001) surfaces",

abstract = "A unique model for the III-rich (001)-surface reconstruction of III-V semiconductors was established. The resulting model consists of subsurface III dimers and chains of atoms located at nonbulk sites along the [110]bulk direction at the surface. The developed model explains the discrepancy between (4 × 1) symmetry found earlier in STM experiments and c(8 × 2) diffraction patterns.",

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AU - Kumpf, C.

AU - Marks, L. D.

AU - Ellis, D.

AU - Smilgies, D.

AU - Landemark, E.

AU - Nielsen, M.

AU - Feidenhans'l, R.

AU - Zegenhagen, J.

AU - Bunk, O.

AU - Zeysing, J. H.

AU - Su, Y.

AU - Johnson, R. L.

PY - 2001/4/16

Y1 - 2001/4/16

N2 - A unique model for the III-rich (001)-surface reconstruction of III-V semiconductors was established. The resulting model consists of subsurface III dimers and chains of atoms located at nonbulk sites along the [110]bulk direction at the surface. The developed model explains the discrepancy between (4 × 1) symmetry found earlier in STM experiments and c(8 × 2) diffraction patterns.

AB - A unique model for the III-rich (001)-surface reconstruction of III-V semiconductors was established. The resulting model consists of subsurface III dimers and chains of atoms located at nonbulk sites along the [110]bulk direction at the surface. The developed model explains the discrepancy between (4 × 1) symmetry found earlier in STM experiments and c(8 × 2) diffraction patterns.

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JO - Physical review letters

JF - Physical review letters

IS - 16

ER -

Subsurface dimerization in III-V semiconductor (001) surfaces

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