Subsurface dimerization in III-V semiconductor (001) surfaces

C. Kumpf, L. D. Marks, D. Ellis, D. Smilgies, E. Landemark, M. Nielsen, R. Feidenhans'l, J. Zegenhagen, O. Bunk, J. H. Zeysing, Y. Su, R. L. Johnson

Research output: Contribution to journalArticlepeer-review

115 Scopus citations


A unique model for the III-rich (001)-surface reconstruction of III-V semiconductors was established. The resulting model consists of subsurface III dimers and chains of atoms located at nonbulk sites along the [110]bulk direction at the surface. The developed model explains the discrepancy between (4 × 1) symmetry found earlier in STM experiments and c(8 × 2) diffraction patterns.

Original languageEnglish (US)
Pages (from-to)3586-3589
Number of pages4
JournalPhysical review letters
Issue number16
StatePublished - Apr 16 2001

ASJC Scopus subject areas

  • General Physics and Astronomy


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