Suitability of metalorganic chemical vapor deposition-derived PrGaO 3 films as buffer layers for YBa2Cu3O 7-x pulsed laser deposition

Bin Han; Deborah A. Neumayer; Tobin J. Marks; David A. Rudman; Hong Zhang; Vinayak P. Dravid

doi:10.1063/1.110074

Suitability of metalorganic chemical vapor deposition-derived PrGaO ₃ films as buffer layers for YBa₂Cu₃O _7-x pulsed laser deposition

Bin Han^*, Deborah A. Neumayer, Tobin J. Marks, David A. Rudman, Hong Zhang, Vinayak P. Dravid

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Phase-pure thin films of the YBa₂Cu₃O_7-x (YBCO) lattice matched and low loss tangent perovskite insulator PrGaO ₃ have been grown in situ on single-crystal (110) LaAlO₃ substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures of 750-800°C using β-diketonate precursors M(dpm) ₃ (M=Pr,Ga; dpm =dipivaloylmethanate). YBCO films were then grown on the MOCVD-derived PrGaO₃ by pulsed laser deposition (PLD). Scanning electron microscopy reveals that the PrGaO₃ films have smooth, featureless surfaces. As assessed by x-ray diffraction, the PrGaO₃ films grow epitaxially on LaAlO₃ with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface, and the subsequent YBCO films grow with a (00l) orientation. Rocking curve and φ-scan analyses reveal that the PrGaO₃ and YBCO films grow epitaxially. Cross-sectional high resolution electron microscopy and transmission electron microscopic selected area diffraction confirm that the PrGaO₃ and YBCO layers grow epitaxially. YBCO films grown by PLD on the MOCVD-derived PrGaO₃ exhibit T_c=91 K and J_c=6×10 ⁶ A/cm² at 77 K in zero field.

Original language	English (US)
Pages (from-to)	3639-3641
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	26
DOIs	https://doi.org/10.1063/1.110074
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{e8853eef5c824eb2897fcdef56c40857,

title = "Suitability of metalorganic chemical vapor deposition-derived PrGaO 3 films as buffer layers for YBa2Cu3O 7-x pulsed laser deposition",

abstract = "Phase-pure thin films of the YBa2Cu3O7-x (YBCO) lattice matched and low loss tangent perovskite insulator PrGaO 3 have been grown in situ on single-crystal (110) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures of 750-800°C using β-diketonate precursors M(dpm) 3 (M=Pr,Ga; dpm =dipivaloylmethanate). YBCO films were then grown on the MOCVD-derived PrGaO3 by pulsed laser deposition (PLD). Scanning electron microscopy reveals that the PrGaO3 films have smooth, featureless surfaces. As assessed by x-ray diffraction, the PrGaO3 films grow epitaxially on LaAlO3 with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface, and the subsequent YBCO films grow with a (00l) orientation. Rocking curve and φ-scan analyses reveal that the PrGaO3 and YBCO films grow epitaxially. Cross-sectional high resolution electron microscopy and transmission electron microscopic selected area diffraction confirm that the PrGaO3 and YBCO layers grow epitaxially. YBCO films grown by PLD on the MOCVD-derived PrGaO3 exhibit Tc=91 K and Jc=6×10 6 A/cm2 at 77 K in zero field.",

author = "Bin Han and Neumayer, {Deborah A.} and Marks, {Tobin J.} and Rudman, {David A.} and Hong Zhang and Dravid, {Vinayak P.}",

year = "1993",

doi = "10.1063/1.110074",

language = "English (US)",

volume = "63",

pages = "3639--3641",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - Suitability of metalorganic chemical vapor deposition-derived PrGaO 3 films as buffer layers for YBa2Cu3O 7-x pulsed laser deposition

AU - Han, Bin

AU - Neumayer, Deborah A.

AU - Marks, Tobin J.

AU - Rudman, David A.

AU - Zhang, Hong

AU - Dravid, Vinayak P.

PY - 1993

Y1 - 1993

N2 - Phase-pure thin films of the YBa2Cu3O7-x (YBCO) lattice matched and low loss tangent perovskite insulator PrGaO 3 have been grown in situ on single-crystal (110) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures of 750-800°C using β-diketonate precursors M(dpm) 3 (M=Pr,Ga; dpm =dipivaloylmethanate). YBCO films were then grown on the MOCVD-derived PrGaO3 by pulsed laser deposition (PLD). Scanning electron microscopy reveals that the PrGaO3 films have smooth, featureless surfaces. As assessed by x-ray diffraction, the PrGaO3 films grow epitaxially on LaAlO3 with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface, and the subsequent YBCO films grow with a (00l) orientation. Rocking curve and φ-scan analyses reveal that the PrGaO3 and YBCO films grow epitaxially. Cross-sectional high resolution electron microscopy and transmission electron microscopic selected area diffraction confirm that the PrGaO3 and YBCO layers grow epitaxially. YBCO films grown by PLD on the MOCVD-derived PrGaO3 exhibit Tc=91 K and Jc=6×10 6 A/cm2 at 77 K in zero field.

AB - Phase-pure thin films of the YBa2Cu3O7-x (YBCO) lattice matched and low loss tangent perovskite insulator PrGaO 3 have been grown in situ on single-crystal (110) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures of 750-800°C using β-diketonate precursors M(dpm) 3 (M=Pr,Ga; dpm =dipivaloylmethanate). YBCO films were then grown on the MOCVD-derived PrGaO3 by pulsed laser deposition (PLD). Scanning electron microscopy reveals that the PrGaO3 films have smooth, featureless surfaces. As assessed by x-ray diffraction, the PrGaO3 films grow epitaxially on LaAlO3 with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface, and the subsequent YBCO films grow with a (00l) orientation. Rocking curve and φ-scan analyses reveal that the PrGaO3 and YBCO films grow epitaxially. Cross-sectional high resolution electron microscopy and transmission electron microscopic selected area diffraction confirm that the PrGaO3 and YBCO layers grow epitaxially. YBCO films grown by PLD on the MOCVD-derived PrGaO3 exhibit Tc=91 K and Jc=6×10 6 A/cm2 at 77 K in zero field.

UR - http://www.scopus.com/inward/record.url?scp=0007588115&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0007588115&partnerID=8YFLogxK

U2 - 10.1063/1.110074

DO - 10.1063/1.110074

M3 - Article

AN - SCOPUS:0007588115

SN - 0003-6951

VL - 63

SP - 3639

EP - 3641

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Suitability of metalorganic chemical vapor deposition-derived PrGaO ₃ films as buffer layers for YBa₂Cu₃O _7-x pulsed laser deposition

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