Suitability of metalorganic chemical vapor deposition-derived PrGaO 3 films as buffer layers for YBa2Cu3O 7-x pulsed laser deposition

Bin Han*, Deborah A. Neumayer, Tobin J. Marks, David A. Rudman, Hong Zhang, Vinayak P. Dravid

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Phase-pure thin films of the YBa2Cu3O7-x (YBCO) lattice matched and low loss tangent perovskite insulator PrGaO 3 have been grown in situ on single-crystal (110) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD). Films were grown at temperatures of 750-800°C using β-diketonate precursors M(dpm) 3 (M=Pr,Ga; dpm =dipivaloylmethanate). YBCO films were then grown on the MOCVD-derived PrGaO3 by pulsed laser deposition (PLD). Scanning electron microscopy reveals that the PrGaO3 films have smooth, featureless surfaces. As assessed by x-ray diffraction, the PrGaO3 films grow epitaxially on LaAlO3 with a high degree of (001) and/or (110) plane orientation parallel to the substrate surface, and the subsequent YBCO films grow with a (00l) orientation. Rocking curve and φ-scan analyses reveal that the PrGaO3 and YBCO films grow epitaxially. Cross-sectional high resolution electron microscopy and transmission electron microscopic selected area diffraction confirm that the PrGaO3 and YBCO layers grow epitaxially. YBCO films grown by PLD on the MOCVD-derived PrGaO3 exhibit Tc=91 K and Jc=6×10 6 A/cm2 at 77 K in zero field.

Original languageEnglish (US)
Pages (from-to)3639-3641
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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