Summary Abstract: Model Calculations for Thermal and Accelerated Beam Doping in Semiconductor Films Grown by Molecular Beam Epitaxy

S. A. Barnett; A. Rockett; G. Bajor; J. E. Greene

doi:10.1116/1.572753

Summary Abstract: Model Calculations for Thermal and Accelerated Beam Doping in Semiconductor Films Grown by Molecular Beam Epitaxy

S. A. Barnett, A. Rockett, G. Bajor, J. E. Greene

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	406-407
Number of pages	2
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	2
Issue number	2
DOIs	https://doi.org/10.1116/1.572753
State	Published - Apr 1984

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.572753

Cite this

@article{11963c179a2a499da22368bb7f74e7f1,

title = "Summary Abstract: Model Calculations for Thermal and Accelerated Beam Doping in Semiconductor Films Grown by Molecular Beam Epitaxy",

author = "Barnett, {S. A.} and A. Rockett and G. Bajor and Greene, {J. E.}",

year = "1984",

month = apr,

doi = "10.1116/1.572753",

language = "English (US)",

volume = "2",

pages = "406--407",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "2",

}

TY - JOUR

T1 - Summary Abstract

T2 - Model Calculations for Thermal and Accelerated Beam Doping in Semiconductor Films Grown by Molecular Beam Epitaxy

AU - Barnett, S. A.

AU - Rockett, A.

AU - Bajor, G.

AU - Greene, J. E.

PY - 1984/4

Y1 - 1984/4

UR - http://www.scopus.com/inward/record.url?scp=84957233193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957233193&partnerID=8YFLogxK

U2 - 10.1116/1.572753

DO - 10.1116/1.572753

M3 - Article

AN - SCOPUS:84957233193

SN - 0734-2101

VL - 2

SP - 406

EP - 407

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 2

ER -

Summary Abstract: Model Calculations for Thermal and Accelerated Beam Doping in Semiconductor Films Grown by Molecular Beam Epitaxy

ASJC Scopus subject areas

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