Summary Abstract: Thermal and accelerated (<200 eV) In doping of Si(100) layers during molecular beam epitaxy

A. Rockett, M. A. Hassan, S. A. Barnett, J. E. Greene

Research output: Contribution to journalArticlepeer-review

9 Scopus citations
Original languageEnglish (US)
Pages (from-to)900-901
Number of pages2
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number3
StatePublished - May 1986

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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