Superconducting-ferromagnetic injection-controlled switching device

Ivan P. Nevirkovets*, Oleksandr Chernyashevskyy, Jason Walter, Oleg A. Mukhanov

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We report the fabrication and characterization at 4.2 K of superconducting-ferromagnetic (SIFS) switching devices that are configured in an injection-controlled weak link geometry (ICWL). Here, S, I, and F denote a superconductor (Nb), an insulator (Al/AlOx), and a ferromagnetic material [Ni or Ni80Fe20 (Py)], respectively. An ICWL device can be designed to have a broad range of output resistances. Therefore, such devices can serve as line drivers and cell selectors in cryogenic memories involving currently developed magnetic memory elements. These devices can have a critical current gain well above 10. We have found that performance of our ICWL devices can be explained by the 'simple heating' model, which corresponds to the result obtained for SIN devices with similar configurations studied earlier by others [K. Takeuchi and Y. Okabe, 'Gap measurement in Nb/NbOx/Al injection controlled planar three terminal devices,' IEEE Trans. Magn., vol. 25, pp. 1282-1285, Mar. 1989]. However, an advantage of the SIFS devices over SIN devices is that the F layer can be made very thin with a negligible resistance as compared with the tunnel barrier resistance.

Original languageEnglish (US)
Article number8637723
JournalIEEE Transactions on Applied Superconductivity
Issue number5
StatePublished - Aug 2019


  • hybrid superconducting-ferromagnetic devices
  • quasiparticle injection
  • superconducting devices
  • superconducting thin films
  • Superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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