Superconducting-Ferromagnetic Transistor

Ivan P. Nevirkovets, Oleksandr Chernyashevskyy, Georgy V. Prokopenko, Oleg A. Mukhanov, John B. Ketterson

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

We report experimental results on the dc and ac characterization of multiterminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively), which display transistor-like properties. We investigated two types of such superconducting-ferromagnetic transistors (SFTs): ordinary devices with a single acceptor (SIS) junction, and devices with a double acceptor. The devices with the single SIS acceptor were investigated and demonstrated a modulation of the maximum Josephson current as a function of the SFIFS current injection level. For devices of the second type, by applying an ac signal (in the kilohertz range) with a constant dc bias current to the injector (SFIFS) junction, we observed a voltage gain of about 25 on the double acceptor with the operating point chosen in the subgap region of the acceptor current-voltage characteristic. We also observed an excellent input-output isolation in our SFIFSIS devices. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.

Original languageEnglish (US)
Article number6800032
JournalIEEE Transactions on Applied Superconductivity
Volume24
Issue number4
DOIs
StatePublished - Aug 1 2014

Keywords

  • Ferromagnetic-superconducting hybrid structures
  • Josephson effect
  • proximity effect
  • quasiparticle injection
  • superconducting transistor
  • superconductivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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