Superconducting tunneling through Nb0.53Ti0.47 Ge multilayers

S. N. Song; B. Y. Jin; F. L. Du; J. B. Ketterson

doi:10.1016/0749-6036(87)90229-1

Superconducting tunneling through Nb_0.53Ti_0.47 Ge multilayers

S. N. Song^*, B. Y. Jin, F. L. Du, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have made a preliminary study of vertical electrical transport in Nb_0.53Ti_0.47 Ge multilayers having the structure Nb/Ge/Nb_0.53Ti_0.47/Ge ... Nb_0.53Ti_0.47/Ge/Nb. The initial and final Nb layers serve as equipotential electrodes, and measurements are analyzed only in the temperature range below which the thick Nb electrodes are superconducting. In-plane (parallel) transport studies were made on identical Nb_0.53Ti_0.47 Ge multilayers (deposited at the same time on a different part of the substrate using an appropriate mask). The layered structure is confirmed by low angle X-ray diffraction and SEM microscopy. Depending on the transition temperature of the Nb_0.53Ti_0.47 Ge multilayers, the temperature-dependent junction resistance shows several interesting features. The I-V characteristics and the first derivative dI/dV were measured, yielding a sum gap of nearly 20meV for a 16 layer structure having a T_c of 7K. Possible interpretations of these results are presented.

Original language	English (US)
Pages (from-to)	485-491
Number of pages	7
Journal	Superlattices and Microstructures
Volume	3
Issue number	5
DOIs	https://doi.org/10.1016/0749-6036(87)90229-1
State	Published - 1987

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Superconducting tunneling through Nb0.53Ti0.47 Ge multilayers",

abstract = "We have made a preliminary study of vertical electrical transport in Nb0.53Ti0.47 Ge multilayers having the structure Nb/Ge/Nb0.53Ti0.47/Ge ... Nb0.53Ti0.47/Ge/Nb. The initial and final Nb layers serve as equipotential electrodes, and measurements are analyzed only in the temperature range below which the thick Nb electrodes are superconducting. In-plane (parallel) transport studies were made on identical Nb0.53Ti0.47 Ge multilayers (deposited at the same time on a different part of the substrate using an appropriate mask). The layered structure is confirmed by low angle X-ray diffraction and SEM microscopy. Depending on the transition temperature of the Nb0.53Ti0.47 Ge multilayers, the temperature-dependent junction resistance shows several interesting features. The I-V characteristics and the first derivative dI/dV were measured, yielding a sum gap of nearly 20meV for a 16 layer structure having a Tc of 7K. Possible interpretations of these results are presented.",

author = "Song, {S. N.} and Jin, {B. Y.} and Du, {F. L.} and Ketterson, {J. B.}",

note = "Funding Information: ACKNOWLEDGEMENTS - We would like to thank H.Q. Yang for designing a mechanical mask and J.Q. Zheng for his contributions at the early stage of the experiments. This work was supported by the NSF through the Northwestern University Materials Research Center under Grant DMR-82-16972. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",

year = "1987",

doi = "10.1016/0749-6036(87)90229-1",

language = "English (US)",

volume = "3",

pages = "485--491",

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T1 - Superconducting tunneling through Nb0.53Ti0.47 Ge multilayers

AU - Song, S. N.

AU - Jin, B. Y.

AU - Du, F. L.

AU - Ketterson, J. B.

N1 - Funding Information: ACKNOWLEDGEMENTS - We would like to thank H.Q. Yang for designing a mechanical mask and J.Q. Zheng for his contributions at the early stage of the experiments. This work was supported by the NSF through the Northwestern University Materials Research Center under Grant DMR-82-16972. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.

PY - 1987

Y1 - 1987

N2 - We have made a preliminary study of vertical electrical transport in Nb0.53Ti0.47 Ge multilayers having the structure Nb/Ge/Nb0.53Ti0.47/Ge ... Nb0.53Ti0.47/Ge/Nb. The initial and final Nb layers serve as equipotential electrodes, and measurements are analyzed only in the temperature range below which the thick Nb electrodes are superconducting. In-plane (parallel) transport studies were made on identical Nb0.53Ti0.47 Ge multilayers (deposited at the same time on a different part of the substrate using an appropriate mask). The layered structure is confirmed by low angle X-ray diffraction and SEM microscopy. Depending on the transition temperature of the Nb0.53Ti0.47 Ge multilayers, the temperature-dependent junction resistance shows several interesting features. The I-V characteristics and the first derivative dI/dV were measured, yielding a sum gap of nearly 20meV for a 16 layer structure having a Tc of 7K. Possible interpretations of these results are presented.

AB - We have made a preliminary study of vertical electrical transport in Nb0.53Ti0.47 Ge multilayers having the structure Nb/Ge/Nb0.53Ti0.47/Ge ... Nb0.53Ti0.47/Ge/Nb. The initial and final Nb layers serve as equipotential electrodes, and measurements are analyzed only in the temperature range below which the thick Nb electrodes are superconducting. In-plane (parallel) transport studies were made on identical Nb0.53Ti0.47 Ge multilayers (deposited at the same time on a different part of the substrate using an appropriate mask). The layered structure is confirmed by low angle X-ray diffraction and SEM microscopy. Depending on the transition temperature of the Nb0.53Ti0.47 Ge multilayers, the temperature-dependent junction resistance shows several interesting features. The I-V characteristics and the first derivative dI/dV were measured, yielding a sum gap of nearly 20meV for a 16 layer structure having a Tc of 7K. Possible interpretations of these results are presented.

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Superconducting tunneling through Nb_0.53Ti_0.47 Ge multilayers

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