Superconducting tunneling through Nb0.53Ti0.47 Ge multilayers

S. N. Song*, B. Y. Jin, F. L. Du, J. B. Ketterson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We have made a preliminary study of vertical electrical transport in Nb0.53Ti0.47 Ge multilayers having the structure Nb/Ge/Nb0.53Ti0.47/Ge ... Nb0.53Ti0.47/Ge/Nb. The initial and final Nb layers serve as equipotential electrodes, and measurements are analyzed only in the temperature range below which the thick Nb electrodes are superconducting. In-plane (parallel) transport studies were made on identical Nb0.53Ti0.47 Ge multilayers (deposited at the same time on a different part of the substrate using an appropriate mask). The layered structure is confirmed by low angle X-ray diffraction and SEM microscopy. Depending on the transition temperature of the Nb0.53Ti0.47 Ge multilayers, the temperature-dependent junction resistance shows several interesting features. The I-V characteristics and the first derivative dI/dV were measured, yielding a sum gap of nearly 20meV for a 16 layer structure having a Tc of 7K. Possible interpretations of these results are presented.

Original languageEnglish (US)
Pages (from-to)485-491
Number of pages7
JournalSuperlattices and Microstructures
Volume3
Issue number5
DOIs
StatePublished - 1987

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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