We have made a preliminary study of vertical electrical transport in Nb0.53Ti0.47 Ge multilayers having the structure Nb/Ge/Nb0.53Ti0.47/Ge ... Nb0.53Ti0.47/Ge/Nb. The initial and final Nb layers serve as equipotential electrodes, and measurements are analyzed only in the temperature range below which the thick Nb electrodes are superconducting. In-plane (parallel) transport studies were made on identical Nb0.53Ti0.47 Ge multilayers (deposited at the same time on a different part of the substrate using an appropriate mask). The layered structure is confirmed by low angle X-ray diffraction and SEM microscopy. Depending on the transition temperature of the Nb0.53Ti0.47 Ge multilayers, the temperature-dependent junction resistance shows several interesting features. The I-V characteristics and the first derivative dI/dV were measured, yielding a sum gap of nearly 20meV for a 16 layer structure having a Tc of 7K. Possible interpretations of these results are presented.
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering