Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6

Haijie Chen; Helmut Claus; Jin Ke Bao; Constantinos C. Stoumpos; Duck Young Chung; Wai Kwong Kwok; Mercouri G. Kanatzidis

doi:10.1021/acs.chemmater.8b02030

Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi₄Te₆

Haijie Chen, Helmut Claus, Jin Ke Bao, Constantinos C. Stoumpos, Duck Young Chung, Wai Kwong Kwok, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi₄Te₆ is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi₄Te₆ single crystals with Na and K. Substitution of Na in CsBi₄Te₆ with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi_3.67Te₆-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi₄Te₆ is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs_0.82K_0.18Bi₄Te₆ with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.

Original language	English (US)
Pages (from-to)	5293-5304
Number of pages	12
Journal	Chemistry of Materials
Volume	30
Issue number	15
DOIs	https://doi.org/10.1021/acs.chemmater.8b02030
State	Published - Aug 14 2018

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering
Materials Chemistry

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10.1021/acs.chemmater.8b02030

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@article{eebb1e95000e4352b5a722a25ed20058,

title = "Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6 ",

abstract = "The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.",

author = "Haijie Chen and Helmut Claus and Bao, {Jin Ke} and Stoumpos, {Constantinos C.} and Chung, {Duck Young} and Kwok, {Wai Kwong} and Kanatzidis, {Mercouri G.}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = aug,

day = "14",

doi = "10.1021/acs.chemmater.8b02030",

language = "English (US)",

volume = "30",

pages = "5293--5304",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "American Chemical Society",

number = "15",

}

TY - JOUR

T1 - Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6

AU - Chen, Haijie

AU - Claus, Helmut

AU - Bao, Jin Ke

AU - Stoumpos, Constantinos C.

AU - Chung, Duck Young

AU - Kwok, Wai Kwong

AU - Kanatzidis, Mercouri G.

PY - 2018/8/14

Y1 - 2018/8/14

N2 - The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.

AB - The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenide-based superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ∼15 T. These findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85048956445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048956445&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.8b02030

DO - 10.1021/acs.chemmater.8b02030

M3 - Article

AN - SCOPUS:85048956445

SN - 0897-4756

VL - 30

SP - 5293

EP - 5304

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 15

ER -

Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi₄Te₆

Abstract

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CSD 1866230: Experimental Crystal Structure Determination

CSD 1866231: Experimental Crystal Structure Determination

CSD 1866234: Experimental Crystal Structure Determination

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Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6

Abstract

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Datasets

CSD 1866230: Experimental Crystal Structure Determination

CSD 1866231: Experimental Crystal Structure Determination

CSD 1866234: Experimental Crystal Structure Determination

Cite this

Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi₄Te₆