Superconductivity in Y4RuGe8with a Vacancy-Ordered CeNiSi2-Type Superstructure

Jin Ke Bao, Huihuo Zheng, Jianguo Wen, Sitaram Ramakrishnan, Hao Zheng, Jidong Samuel Jiang, Daniel Bugaris, Gang Cao, Duck Young Chung, Sander Van Smaalen, Mercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report a new compound, Y4RuGe8, with a transition metal vacancy-ordered CeNiSi2-type superstructure, which has a superconducting transition at 1.3 K. Y4RuGe8 crystals were grown by indium flux at relatively low temperatures (below 1273 K), which makes it possible to stabilize such a vacancy-ordered phase. The crystal structure of Y4RuGe8 was solved by single-crystal X-ray diffraction and confirmed by transmission electron microscopy. The as-grown Y4RuGe8 crystals are always twinned, crystallizing in the space group P1¯ (no. 2) with the lattice parameters a = 5.7680(1) Å, b = 8.2042(2) Å, c = 11.5093(3) Å, α = 79.696(1)°, β = 88.491(1)°, and γ= 79.637(2)° this structure is a superstructure deriving from the higher symmetry CeNiSi2-type structure (Cmcm, no. 63) due to the ordering of Ru vacancies. The ordering of Ru sites breaks slightly distorted Ge planes in the CeNiSi2 prototype into infinite cis-trans Ge chains in Y4RuGe8. The presence of bulk superconductivity in Y4RuGe8 is well supported by zero resistance and a jump in specific heat at the critical transition temperature. The Sommerfeld coefficient (19 mJ K-2 mol-1) of the specific heat is greater than that (11 mJ K-2 mol-1) estimated using the bare density of states (4.7 states/eV/f.u.) from first-principles calculations. The ab initio calculations indicate that 4d electrons of both Y and Ru and 4p electrons of Ge are the main contributors to the total density of states at the Fermi level in Y4RuGe8.

Original languageEnglish (US)
Pages (from-to)7839-7847
Number of pages9
JournalChemistry of Materials
Volume33
Issue number19
DOIs
StatePublished - Oct 12 2021

Funding

Work at Argonne National Laboratory was supported by the U.S. Department of Energy, Basic Energy Sciences, Office of Science, Materials Sciences and Engineering Division. Use of the Center for Nanoscale Materials for EDS and TEM measurements, an Office of Science user facility, at Argonne National Laboratory was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under contract no. DE-AC02-06CH11357. We gratefully acknowledge the computing resources provided on Bebop, a high-performance computing cluster operated by the Laboratory Computing Resource Center at Argonne National Laboratory. J.-K.B. acknowledges Alexander von Humboldt Foundation for the financial support in Germany. G.C. acknowledges NSF support via grant DMR 190388 for specific heat measurement.

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry

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