Abstract
GaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600-670°C. A cubic SiC buffer layer was grown on Si(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 301-306 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 395 |
| State | Published - Jan 1 1996 |
| Event | Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering