Supersonic jet epitaxy: an improved method for nitride deposition

Peter E. Norris*, Long D. Zhu, H. Paul Maruska, Wilson Ho, Scott Ustin, L. Lauhon

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

GaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600-670°C. A cubic SiC buffer layer was grown on Si(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

Original languageEnglish (US)
Pages (from-to)301-306
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume395
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Supersonic jet epitaxy: an improved method for nitride deposition'. Together they form a unique fingerprint.

Cite this