Supersonic jet epitaxy of aluminum nitride on silicon (100)

Kyle A. Brown*, S. A. Ustin, L. Lauhon, W. Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720°C≥Ts≥620°C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)3] and ammonia (NH3). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.

Original languageEnglish (US)
Pages (from-to)7667-7671
Number of pages5
JournalJournal of Applied Physics
Issue number10
StatePublished - May 15 1996

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Supersonic jet epitaxy of aluminum nitride on silicon (100)'. Together they form a unique fingerprint.

Cite this