Supersonic jet epitaxy of aluminum nitride on silicon (100)

Kyle A. Brown; S. A. Ustin; L. Lauhon; W. Ho

doi:10.1063/1.362431

Supersonic jet epitaxy of aluminum nitride on silicon (100)

Kyle A. Brown^*, S. A. Ustin, L. Lauhon, W. Ho

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720°C≥T_s≥620°C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C₂H₅)₃] and ammonia (NH₃). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.

Original language	English (US)
Pages (from-to)	7667-7671
Number of pages	5
Journal	Journal of Applied Physics
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.362431
State	Published - May 15 1996

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General Physics and Astronomy

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title = "Supersonic jet epitaxy of aluminum nitride on silicon (100)",

abstract = "Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720°C≥Ts≥620°C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)3] and ammonia (NH3). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.",

author = "Brown, {Kyle A.} and Ustin, {S. A.} and L. Lauhon and W. Ho",

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T1 - Supersonic jet epitaxy of aluminum nitride on silicon (100)

AU - Brown, Kyle A.

AU - Ustin, S. A.

AU - Lauhon, L.

AU - Ho, W.

PY - 1996/5/15

Y1 - 1996/5/15

N2 - Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720°C≥Ts≥620°C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)3] and ammonia (NH3). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.

AB - Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720°C≥Ts≥620°C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)3] and ammonia (NH3). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200-400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.

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Supersonic jet epitaxy of aluminum nitride on silicon (100)

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