Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires

Bernhard Loitsch; Nari Jeon; Markus Döblinger; Julia Winnerl; Eric Parzinger; Sonja Matich; Ursula Wurstbauer; Hubert Riedl; Gerhard Abstreiter; Jonathan J. Finley; Lincoln James Lauhon; Gregor Koblmüller

doi:10.1063/1.4962269

Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires

Bernhard Loitsch, Nari Jeon, Markus Döblinger, Julia Winnerl, Eric Parzinger, Sonja Matich, Ursula Wurstbauer, Hubert Riedl, Gerhard Abstreiter, Jonathan J. Finley, Lincoln James Lauhon, Gregor Koblmüller

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Probing localized alloy fluctuations and controlling them by growth kinetics have been relatively limited so far in nanoscale structures such as semiconductor nanowires (NWs). Here, we demonstrate the tuning of alloy fluctuations in molecular beam epitaxially grown GaAs-AlGaAs core-shell NWs by modifications of shell growth temperature, as investigated by correlated micro-photoluminescence, scanning transmission electron microscopy, and atom probe tomography. By reducing the shell growth temperature from T > 600 °C to below 400 °C, we find a strong reduction in alloy fluctuation mediated sharp-line luminescence, concurrent with a decrease in the non-randomness of the alloy distribution in the AlGaAs shell. This trend is further characterized by a change in the alloy compositional structure from unintentional quasi-superlattices of Ga- and Al-rich AlGaAs layers at high T to a nearly homogeneous random alloy distribution at low T.

Original language	English (US)
Article number	093105
Journal	Applied Physics Letters
Volume	109
Issue number	9
DOIs	https://doi.org/10.1063/1.4962269
State	Published - Aug 29 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires",

abstract = "Probing localized alloy fluctuations and controlling them by growth kinetics have been relatively limited so far in nanoscale structures such as semiconductor nanowires (NWs). Here, we demonstrate the tuning of alloy fluctuations in molecular beam epitaxially grown GaAs-AlGaAs core-shell NWs by modifications of shell growth temperature, as investigated by correlated micro-photoluminescence, scanning transmission electron microscopy, and atom probe tomography. By reducing the shell growth temperature from T > 600 °C to below 400 °C, we find a strong reduction in alloy fluctuation mediated sharp-line luminescence, concurrent with a decrease in the non-randomness of the alloy distribution in the AlGaAs shell. This trend is further characterized by a change in the alloy compositional structure from unintentional quasi-superlattices of Ga- and Al-rich AlGaAs layers at high T to a nearly homogeneous random alloy distribution at low T.",

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AU - Loitsch, Bernhard

AU - Jeon, Nari

AU - Döblinger, Markus

AU - Winnerl, Julia

AU - Parzinger, Eric

AU - Matich, Sonja

AU - Wurstbauer, Ursula

AU - Riedl, Hubert

AU - Abstreiter, Gerhard

AU - Finley, Jonathan J.

AU - Lauhon, Lincoln James

AU - Koblmüller, Gregor

PY - 2016/8/29

Y1 - 2016/8/29

N2 - Probing localized alloy fluctuations and controlling them by growth kinetics have been relatively limited so far in nanoscale structures such as semiconductor nanowires (NWs). Here, we demonstrate the tuning of alloy fluctuations in molecular beam epitaxially grown GaAs-AlGaAs core-shell NWs by modifications of shell growth temperature, as investigated by correlated micro-photoluminescence, scanning transmission electron microscopy, and atom probe tomography. By reducing the shell growth temperature from T > 600 °C to below 400 °C, we find a strong reduction in alloy fluctuation mediated sharp-line luminescence, concurrent with a decrease in the non-randomness of the alloy distribution in the AlGaAs shell. This trend is further characterized by a change in the alloy compositional structure from unintentional quasi-superlattices of Ga- and Al-rich AlGaAs layers at high T to a nearly homogeneous random alloy distribution at low T.

AB - Probing localized alloy fluctuations and controlling them by growth kinetics have been relatively limited so far in nanoscale structures such as semiconductor nanowires (NWs). Here, we demonstrate the tuning of alloy fluctuations in molecular beam epitaxially grown GaAs-AlGaAs core-shell NWs by modifications of shell growth temperature, as investigated by correlated micro-photoluminescence, scanning transmission electron microscopy, and atom probe tomography. By reducing the shell growth temperature from T > 600 °C to below 400 °C, we find a strong reduction in alloy fluctuation mediated sharp-line luminescence, concurrent with a decrease in the non-randomness of the alloy distribution in the AlGaAs shell. This trend is further characterized by a change in the alloy compositional structure from unintentional quasi-superlattices of Ga- and Al-rich AlGaAs layers at high T to a nearly homogeneous random alloy distribution at low T.

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Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires

Abstract

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