Suppression of three-dimensional island nucleation during GaAs growth on Si(100)

C. H. Choi*, R. Ai, S. A. Barnett

*Corresponding author for this work

Research output: Contribution to journalArticle

64 Scopus citations

Abstract

Very-low-energy (S 28 eV), high-flux 0.4 mA/cm2) Ar-ion irradiation during molecular-beam epitaxy changed the nucleation of GaAs on Si(100) from Stranski-Krastanov to a mechanism approaching layer-by-layer growth. While three-dimensional island nucleation was eliminated, the growth surface exhibited low-amplitude undulations. The results are explained by ion-induced removal of atoms from stable 3D islands, which suppressed 3D island nucleation.

Original languageEnglish (US)
Pages (from-to)2826-2829
Number of pages4
JournalPhysical review letters
Volume67
Issue number20
DOIs
StatePublished - Jan 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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