Abstract
Very-low-energy (S 28 eV), high-flux 0.4 mA/cm2) Ar-ion irradiation during molecular-beam epitaxy changed the nucleation of GaAs on Si(100) from Stranski-Krastanov to a mechanism approaching layer-by-layer growth. While three-dimensional island nucleation was eliminated, the growth surface exhibited low-amplitude undulations. The results are explained by ion-induced removal of atoms from stable 3D islands, which suppressed 3D island nucleation.
Original language | English (US) |
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Pages (from-to) | 2826-2829 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 67 |
Issue number | 20 |
DOIs | |
State | Published - 1991 |
ASJC Scopus subject areas
- General Physics and Astronomy