Very-low-energy (S 28 eV), high-flux 0.4 mA/cm2) Ar-ion irradiation during molecular-beam epitaxy changed the nucleation of GaAs on Si(100) from Stranski-Krastanov to a mechanism approaching layer-by-layer growth. While three-dimensional island nucleation was eliminated, the growth surface exhibited low-amplitude undulations. The results are explained by ion-induced removal of atoms from stable 3D islands, which suppressed 3D island nucleation.
ASJC Scopus subject areas
- Physics and Astronomy(all)