TY - JOUR
T1 - Supramolecular order of solution-processed perylenediimide thin films
T2 - High-performance small-channel n-type organic transistors
AU - Fabiano, Simone
AU - Wang, He
AU - Piliego, Claudia
AU - Jaye, Cherno
AU - Fischer, Daniel A.
AU - Chen, Zhihua
AU - Pignataro, Bruno
AU - Facchetti, Antonio
AU - Loo, Yueh Lin
AU - Loi, Maria Antonietta
PY - 2011/12/6
Y1 - 2011/12/6
N2 - N,N′-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2), a soluble and air stable n-type molecule, undergoes significant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge-on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF-CN2 molecules. The presence of a pronounced π-π stacking is confirmed by combining near-edge X-ray absorption fine structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measurements. The remarkable charge carrier mobility measured in field-effect transistors, using both bottom- and top-contact (bottom-gate) configurations, underlines the importance of strong intermolecular interactions for the realization of high performing devices.
AB - N,N′-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide (PDIF-CN 2), a soluble and air stable n-type molecule, undergoes significant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge-on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF-CN2 molecules. The presence of a pronounced π-π stacking is confirmed by combining near-edge X-ray absorption fine structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measurements. The remarkable charge carrier mobility measured in field-effect transistors, using both bottom- and top-contact (bottom-gate) configurations, underlines the importance of strong intermolecular interactions for the realization of high performing devices.
KW - charge injection
KW - organic transistors
KW - solution processes
KW - supramolecular electronics
UR - http://www.scopus.com/inward/record.url?scp=82555189916&partnerID=8YFLogxK
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U2 - 10.1002/adfm.201101427
DO - 10.1002/adfm.201101427
M3 - Article
AN - SCOPUS:82555189916
SN - 1616-301X
VL - 21
SP - 4479
EP - 4486
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 23
ER -